2009
DOI: 10.1002/pssb.200945137
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Raman tensor analysis of sapphire single crystal and its application to define crystallographic orientation in polycrystalline alumina

Abstract: Raman selection rules were theoretically put forward and, according to the obtained relationships, the full set of Raman tensor elements was experimentally determined for the corundum structure of a sapphire single‐crystal. The knowledge of the Raman selection rules allowed us to represent the change in polarizability of the aluminium oxide molecule with respect to each of the available vibrational modes. Restrictions related to the symmetry of the scattering system are also discussed together with directional… Show more

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Cited by 62 publications
(52 citation statements)
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“…The lines corresponding to vibrations of different symmetry should manifest at different polarizations of incident and scattered radiation. [37][38][39][40][41][42][43][44][45] A clear angular dependence of the Raman signal (Fig. 7) was observed for single crystals of The angular dependence confirms the directional character of low frequency vibrations, whereas in the c direction no signal is observed, and the signal is most intense perpendicular to c.…”
mentioning
confidence: 84%
“…The lines corresponding to vibrations of different symmetry should manifest at different polarizations of incident and scattered radiation. [37][38][39][40][41][42][43][44][45] A clear angular dependence of the Raman signal (Fig. 7) was observed for single crystals of The angular dependence confirms the directional character of low frequency vibrations, whereas in the c direction no signal is observed, and the signal is most intense perpendicular to c.…”
mentioning
confidence: 84%
“…The extracted mode intensities as a function of polarization angle are modeled using the Raman tensors for the C 3v point group (i.e., the trigonal symmetry of the lattice). The Raman intensity as a function of polarization angle can be calculated using the equation 20,29 …”
mentioning
confidence: 99%
“…Hopkins and Farrow have determined the local crystallographic orientations of laser-recrystallized polycrystalline silicon in silicon-on-insulator (SOI) structures using polarized Raman spectroscopy [12]. Munisso et al also employed this method to determine the crystallographic orientation of polycrystalline alumina [13]. The Euler angles of multicrystalline silicon have been determined by Becker et al with Raman spectroscopy during the stress measurement, though this method involves complicated formulas and tedious calculations [14].…”
Section: Introductionmentioning
confidence: 99%