Raman Tensor of Layered SnS₂

Abstract

Recently, tin disulfide (SnS2) has become a hot research focus in various fields due to its advantages of a high transistor switching ratio, an adjustable band gap in visible light range, excellent Li storage performance, sensitive gas recognition, and efficient photocatalytic capability. However, at present, studies of its basic structure mostly stay on the regulation related to the number of layers. To maximize the value of SnS2 in the application design, this paper analyzes the angle-resolved polarized Raman spectra of SnS2 crystals grown under high-temperature sealing systems. Under the parallel scattering configuration test of both the sample basal plane and the cross plane, we observed that how the Raman scattering intensity of the two test planes varies with the polarization angle is different. Combining this experimental result with theory support allows us to reach a conclusion that the differential polarizability of the phonon vibration mode along the z-axis of the cross plane of SnS2 is proven to be the strongest. This finding is expected to provide favorable support for the application of structural regulation of SnS2 and work as a reference for studying other van der Waals layered materials with greater potential.

Hydrogen‐Induced Conversion of SnS2 into SnS or Sn: A Route to Create SnS2/SnS Heterostructures

“…This compares favorably to previous reports of this mode between 314.3 and 318 cm −1 . [ 23,36,37 ] The A 1g mode can also be seen in the H 2 exposed sample, although with a lower intensity, together with four additional peaks centered at 95.1, 158.2, 185.1, and 224.1 cm −1 . These are assigned to the A g , B 3g , A g , and A g modes of SnS, respectively.…”

Distortion of the Coordination Structure and High Symmetry of the Crystal Structure in In4SnS8 Microflowers for Enhancing Visible-Light Photocatalytic CO2 Reduction

“…Compared with those of In 2 S 3 , the symmetry of the [InS 6 ] structural unit in In 4 SnS 8 is reduced and the twisting degree of the bond angle increases. For SnS 2 samples, the typical Raman spectrum consists of a characteristic peak at 310.9 cm –1 for hexagonal SnS 2 …”

Laser tuning in AlN single crystals

“…The measurement geometry is shown in Fig. 1a [24][25][26][27][28][29][30][31][32][33][34], where a polarizer with fixed polarization direction was placed in the collecting optical path to ensure that the polarization direction of scattering light was strictly consistent with that of pump light. In order to avoid the influences of pump light absorption and resonance Raman scattering on the intensity of scattering light, 488-nm Ar+ gas laser was used as pump light and focused on the AlN surface through a 50× quartz lens [35][36][37][38][39].…”