Random Nanosized Metal Grains and Interface-Trap Fluctuations in Emerging CMOS Technologies

Li, Yiming

doi:10.1016/b978-0-12-803581-8.00633-0

Cited by 5 publications

(2 citation statements)

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“…3(c). The RITs are generated arbitrarily at the SiO2 and Si channel interface using the statistical generation simulator [5], [11]. The dimension of each RIT is 2 nm 2 with a density of around 1.5-7.6 × 10 13 cm -2 eV -1 .…”

Section: Itf Fluctuated Devicesmentioning

confidence: 99%

“…It exhibits excellent short channel control and improves the performance of the transistor at reduced gate length. It also provides more conducting channels, improved power performance, and better area scaling compared to its other competitor transistors such as FinFET and nanowire [8][9][10][11]. However, nanoscale devices are suffered from different kinds of fluctuations that cause variability in their electrical characteristics [12][13][14][15] and the miniaturization increases the device sensitivity to microscopic perturbation.…”

Section: Introductionmentioning

confidence: 99%

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A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs

Butola

Kola

2022

IEEE Access

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The sensitivity of semiconductor devices to any microscopic perturbation is increasing with the continuous shrinking of device technology. Even the small fluctuations have become more acute for highly scaled nano-devices. Therefore, these fluctuations need to be addressed extensively in order to continue further device scaling. In this paper, we mainly focus on three intrinsic parameter fluctuation sources, work function fluctuation (WKF), random dopant fluctuation (RDF), and interface trap fluctuation (ITF) for gate-all-around (GAA) silicon nanosheet (NS) MOSFETs. Generally, the effect of these fluctuations is analyzed using a time-consuming device simulation process. A machine learning (ML) based powerful and efficient artificial neural network (ANN) model is used to accelerate this process. Firstly, the effects of fluctuation sources are analyzed individually by using the ANN model and results have been presented that show the WKF variations dominate the threshold voltage (VTH), off-state current (IOFF), and on-state current (ION) variations among other fluctuation sources. Next, we examine the combined effect of all three fluctuation sources. It is crucial because considering only one fluctuation can result in unexpected variations due to other fluctuations present in the device. Therefore, the ANN model is used to estimate the combined effects as well. The results show that the proposed model predicts the outputs with an R 2 -score of 99% and an error rate of less than 1%. In addition, the ML is also utilized to calculate the permutation importance of input variables as a measure to investigate the contribution of each fluctuation source.

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Section: Itf Fluctuated Devicesmentioning

confidence: 99%