Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

Yang, HeeBong; Robitaille, Marcel; Chen, Xuesong; Elgabra, Hazem; Wei, Lan; Kim, Na Young

doi:10.1109/led.2021.3132964

Cited by 15 publications

(11 citation statements)

References 18 publications

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“…As expected, the oscillations became less significant with increase in temperature. Cryogenic characterization of FinFETs has already been performed in a variety of temperatures ranging from 4 to 300 K. [18][19][20][21][22][23][24][25][26] However, the HSPICE used in this study guaranteed that the operation takes place at more than 13.15 K (=−260°). As can be easily inferred, lower temperature operation improves the Coulomb oscillation; thus, we consider the limitation of the low 13.15 K as not significant.…”

Section: Resultsmentioning

confidence: 99%

SPICE compact model of controlling electrons of spin qubits using FinFET

Pérez-Rodríguez¹,

Orvañanos-Guerrero²,

Tanamoto³

2023

Jpn. J. Appl. Phys.

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Semiconductor qubits have garnered attention in the field of device physics. Owing to the limited coherence of electrons and holes, smaller and more compact qubits are desirable. This requirement is aligned with the miniaturization of conventional transistors. In this study, we consider a compact spin qubit based on the FinFET(Fin Field-Effect Transistor) by using SPICE (Simulation Program with Integrated Circuit Emphasis) simulator. The qubits are represented by the quantum dots (QDs) between the Fin structure. In order to setup the qubit, we have to control the number of electrons through the FinFET. Here, we consider the circuit model of our system by treating the transport properties of the QD and the FinFET as the single-electron phenomena. We provide the SPICE simulation results and show the single-electron current as the functions of the FinFET parameters such as the channel length and width including the operation temperature.

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Section: Resultsmentioning

confidence: 99%

SPICE compact model of controlling electrons of spin qubits using FinFET

Pérez-Rodríguez¹,

Orvañanos-Guerrero²,

Tanamoto³

2023

Jpn. J. Appl. Phys.

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“…Hence, a leakage current from source to drain through channel as well as gate to the channel through gate oxide layer is unavoidable. As a result recent experimental observations in the oscillations of drain current at both low and room temperatures confirms the origin of Random Telegraph Noise (RTN) that may reduce the performance of qubit gate operations [22][23][24][25][26] In most cases, compared to coherent time, the dephasing time of qubits in presence of noise is reduced by several orders of magnitude due to coupling of qubits to the environment. The reduction of dephasing time depends on the specific dynamical coupling sequence from where the principle of quantum mechanics is inevitably lost.…”

Section: Introductionmentioning

confidence: 86%

Influence of Random Telegraph Noise on Quantum Bit Gate Operation

Jackson¹,

Prabhakar²,

Lal³

et al. 2022

Preprint

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We consider the problem of analyzing spin-flip qubit gate operation in presence of Random Telegraph Noise (RTN). Our broad approach is the following. We calculate the spin-flip probability of qubit driven by composite pulses, (Constant pulse (C-pulse), Quantum Well pulse (QW-pulse) and Barrier Potential pulse (BP-pulse)) in the presence of RTN using Feynman disentangling method. When composite pulses and RTN act in x-direction and z-direction respectively, we calculate the optimal time to achieve 100% spin-flip probability of qubit. We report the shortcut of spin-flip qubit, which can be achieved by using C-pulse, followed by BP-pulse and QW-pulse. When jumps time in RTN are very fast, tuning of perfect fidelity or spin-flip probability extends to large RTN correlation time. On the other hand, when the jumps in RTN are very slow, the BP-pulse can be used to recover the lost fidelities. Nevertheless, the fidelities of qubit gate operation are larger than 90%, regardless of RTN jumps environments which may be beneficial in quantum error correction. For more general case, we have tested several pulse sequences for achieving high fidelity quantum gates, where we have used the pulses acting in different directions. From the calculations, we find high fidelity of qubit gate operation in presence of RTN is achieved when QW-pulse, BP-pulse and C-pulse act in x-direction, y-direction and z-direction, respectively.

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“…They adversely impact circuit performance by causing, for example, jitters and malfunction of SRAM [4]. For future quantum computing at low temperature, this fluctuation can reach 50% [15].…”

Section: Introductionmentioning

confidence: 99%

An Integral Methodology for Predicting Long-Term RTN

Tok

Mehedi

Zhang

et al. 2022

IEEE Trans. Electron Devices

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Random Telegraph Noise (RTN) adversely impacts circuit performance and this impact increases for smaller devices and lower operation voltage. To optimize circuit design, many efforts have been made to model RTN. RTN is highly stochastic, with significant device-to-device variations. Early works often characterize individual traps first and then group them together to extract their statistical distributions. This bottom-up approach suffers from limitations in the number of traps it is possible to measure, especially for the capture and emission time constants, calling the reliability of extracted distributions into question. Several compact models have been proposed, but their ability to predict long term RTN is not verified. Many early works measured RTN only for tens of seconds, although a longer time window increases RTN by capturing slower traps. The aim of this work is to propose an integral methodology for modelling RTN and, for the first time, to verify its capability of predicting the long term RTN. Instead of characterizing properties of individual traps/devices, the RTN of multiple devices were integrated to form one dataset for extracting their statistical properties. This allows using the concept of effective charged traps (ECT) and transforms the need for time constant distribution to obtaining the kinetics of ECT, making long term RTN prediction similar to predicting ageing. The proposed methodology opens the way for assessing RTN impact within a window of 10 years by efficiently evaluating the probability of a device parameter at a given level.

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Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

Cited by 15 publications

References 18 publications

SPICE compact model of controlling electrons of spin qubits using FinFET

SPICE compact model of controlling electrons of spin qubits using FinFET

Influence of Random Telegraph Noise on Quantum Bit Gate Operation

An Integral Methodology for Predicting Long-Term RTN

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