Random Telegraph Noise Under Switching Operation

Kobayashi, Kazutoshi; Islam, Mahfuzul; Matsumoto, Takashi; Kishida, Reiji

doi:10.1007/978-3-030-37500-3_9

Cited by 1 publication

(2 citation statements)

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“…A further implication is the effective fluctuation caused by the trapping-detrapping mechanism. Accordingly, it is commonly accepted [ 7 , 14 ] that the variation ( ), due to one electron charge trapped at the -Si interface is described by ( 1 ) and applies also to RTN analysis, where is the elementary charge carrier, is the gate oxide capacitance. and refer to the width and length of the MOSFET device.…”

Section: Random Telegraph Noise In Dynamic Circuitsmentioning

confidence: 99%

“…Influences of jitter and phase noise on the circuit performance were analyzed in [ 6 ]. Subsequently, to analyze the RTN’s effects on MOSFET devices during switching operations, studies [ 7 , 8 ] have provided remarkable knowledge of the RTN from ROSC based analysis. Since the key parameter of ROSCs is the oscillation frequency, by narrowing the observation to the frequency difference between two ROSCs’ signals, a high measurement resolution can be achieved by this “dual ROSC method” [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

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Bias dependence in statistical random telegraph noise analysis based on nanoscale CMOS ring oscillators

Ramazanoglu,

Michalowska-Forsyth,

Deutschmann

2023

Elektrotech. Inftech.

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Random Telegraph Noise (RTN) is one of the major reliability concerns in nanoscale complementary metal-oxide semiconductor (CMOS) technologies. In this paper, we discuss the characterization of RTN in 40 nm CMOS technology using Ring Oscillators (ROSCs). We used different types of ROSCs to study the temporal and spectral characteristics of the RTN. We conducted measurements on one of the arrays with 128 identical ROSC cells. These results enabled statistical characterization of the RTN amplitude strength and its frequency characteristics in different supply voltage variations from 0.5 V to 0.7 V. At power supply of 0.65 V, dominant and observable RTN amplitude above 0.37% $$\Delta f/f_{\text{mean}}$$ Δ f / f mean is found in 60% of cells in the array. Further, the capture and emission time constant $$\tau_{e//c}$$ τ e / / c can be extracted from the measurements, the values observed ranging from 0.2 $$\upmu$$ μ s to 10 ms.

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