Range profiles in self-ion-implanted crystalline Si

Nordlund, K.; Keinonen, J.; Raühala, E.; Ahlgren, T.

doi:10.1103/physrevb.52.15170

Cited by 23 publications

(18 citation statements)

References 35 publications

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“…Similarly, Rutherford backscattering/channeling is normally not sensitive enough to detect defects in quantum dots on surfaces. 170 On the other hand, both methods could be suitable for analysis of large concentrations of nanoclusters embedded in the bulk.…”

Section: Experimental Techniques Used To Identify Defects In Nanmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

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947

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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Section: Experimental Techniques Used To Identify Defects In Nanmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

Self Cite

947

591

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“…As obtained by cross-sectional nano-indents ( Figure 5(c)), experimental damage profiles were 50-100 nm: 2-4 times of the SRIM estimate. This study also used MD simulations: stated [67,68,[77][78][79][80][81][82][83][84][85][86][87][88][89] to capture the ballistic stage of radiation damage. Largescale MD simulations have challenges, mainly in terms of capturing relevant time and length scales.…”

Section: Discussionmentioning

confidence: 99%

“…Simulations involved standard SRIM [70][71][72] profile and more detailed MD [67,68,[79][80][81][82][83][84][85][86][87][88][89]. For MD, two simulation boxes, of appropriately orientated pure Zr single crystals, were created.…”

Section: Simulations Detailsmentioning

confidence: 99%

“…Finally, the modelling of radiation damage appears equally challenging. From modelling defect production by displacement cascades [23,29,30], suitable for MD (molecular dynamics) [25,[65][66][67][68], to short-and long-term predications of microstructures and properties [43,64], radiation damage truly justifies the so-called multi-scale modelling [30,69].…”

Section: Introductionmentioning

confidence: 99%

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Orientation sensitivity of focused ion beam damage in pure zirconium: direct experimental observations and molecular dynamics simulations

Revelly

Srinivasan

Panwar

et al. 2014

Philosophical Magazine

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A high-purity predominantly single crystalline zirconium was subjected to controlled focused ion beam (FIB) damage. Damage estimates were obtained from electron backscattered diffraction (EBSD) and nano-indentation measurements on exactly the same area/orientation. The damage kinetics, between different crystallographic orientations, differed by one order of magnitude and a clear hierarchy of orientation sensitive ion damage emerged. Use of a simple geometric approach, linear density of atoms and corresponding scattering cross-sections to impinging gallium ions, could differentiate between extreme damage kinetics; but failed when such differences were relatively minor. Numerically intensive molecular dynamics (MD) simulations, on the other hand, were more effective. However, MD simulations or direct EBSD observations failed to justify anisotropic irradiation hardening (AIH): 3-8 times more hardening for near basal. Though explanation for AIH is indirect, evidence and rationalization for orientation-sensitive radiation damage appears clear and statistically reproducible.

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“…However, the measurement of ion range profiles is frequently carried out with IBA techniques such as Rutherford backscattering (RBS), elastic recoil detection analysis (ERDA) or nuclear resonance broadening (NRB). Moreover, by combining ion range calculations with measurements of range profiles it may be possible to deduce information about the electronic stopping or sample structure [29,30]. Thus range calculations may in such contexts be considered an indirect method of ion beam analysis, and the same simulation methods used to obtain range profiles can also be used to simulate ion beam analysis.…”

Section: Ion Range Calculationsmentioning

confidence: 99%