2009
DOI: 10.1109/tit.2009.2018336
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Rank Modulation for Flash Memories

Abstract: Abstract-We explore a novel data representation scheme for multilevel flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a "push-to-the-top" operation, which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells.We present unrestricted Gray… Show more

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Cited by 213 publications
(8 citation statements)
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“…For exactly and efficiently representing data in flash memory, the rank modulation scheme was presented and studied in a recent series of papers, specifically [1][2][3][4]. In the rank modulation scheme [1], a permutation induced by the relative charge levels of certain cells represents stored information. In this scheme, programming operation is restricted to the "push-to-the-top" operation.…”
Section: Introductionmentioning
confidence: 99%
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“…For exactly and efficiently representing data in flash memory, the rank modulation scheme was presented and studied in a recent series of papers, specifically [1][2][3][4]. In the rank modulation scheme [1], a permutation induced by the relative charge levels of certain cells represents stored information. In this scheme, programming operation is restricted to the "push-to-the-top" operation.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, in this scheme, over-programming (increasing the charge level of a cell above the desired amount) is not an issue. Additionally, this scheme can reduce corruption and speed up cell programming [1].…”
Section: Introductionmentioning
confidence: 99%
See 3 more Smart Citations