Rapid crystallization of silicon films using Joule heating of metal films

Sameshima, Toshiyuki; Kaneko, Y.; Andoh, Nobuyuki

doi:10.1007/s003390100900

Cited by 21 publications

(15 citation statements)

References 1 publication

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“…We have recently developed the electrical-current-induced Joule as a simple and rapid thermal annealing method. [23][24][25] The crystallization of silicon films has been achieved through melt regrowth by µsec-rapid heating caused by electricalcurrent-induced Joule heating with an energy threshold of 0.6 J/cm 2 . High-quality polycrystalline silicon with a grain size from 0.2 to 5 µm has been formed.…”

Section: Crystallization Of Silicon Filmsmentioning

confidence: 99%

Progress in fabrication technologies of polycrystalline-silicon thin-film transistors at low temperatures

Sameshima

2005

J. Soc. Inf. Display

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Abstract— The development of fabrication processes for polycrystalline‐silicon thin‐film transistors (poly‐Si TFTs) at low temperatures will be discussed. Rapid crystallization of silicon films through laser‐induced melt regrowth has the advantage of having a low thermal budget. Solid‐phase crystallization techniques have also been improved for low‐temperature processing. Passivation of the SiO2/Si interface and crystalline grain boundaries is important in achieving high‐carrier‐transport properties. Oxygen‐plasma and H2O‐vapor heat treatments are proposed for the effective reduction of the density of defect states. TFTs with high performances will be reported.

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Section: Crystallization Of Silicon Filmsmentioning

confidence: 99%

Progress in fabrication technologies of polycrystalline-silicon thin-film transistors at low temperatures

Sameshima

2005

J. Soc. Inf. Display

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“…Lateral crystalline grain growth is very important for the formation of large crystalline grain in thin films. We recently reported the lateral crystalline grain growth using the electrical current induced joule heating of silicon films and metal films [11][12][13][14]. In these methods, the lateral crystalline grain growth was achieved by the spatial distribution of joule heating intensity in the lateral direction.…”

Section: Introductionmentioning

confidence: 99%

Crystallization of silicon films by rapid joule heating method

Andoh¹,

Sameshima²,

Kitahara³

2005

Thin Solid Films

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“…[11][12][13][14] We have also reported a crystallization method involving electricalcurrent-induced joule heating of silicon films in order to fabricate large crystalline grains in the lateral direction. [15][16][17][18] We have demonstrated the possibility of controlling the solidification parameters such as the melt duration and the cooling rate using simple electrical circuits.…”

Section: Introductionmentioning

confidence: 99%

Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating

Andoh

Sameshima

2002

Jpn. J. Appl. Phys.

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Large crystalline grain growth was demonstrated for 60-nm-thick silicon films using the electrical-current-induced joule heating method. Tapered electrodes were used in order to ensure distribution of the joule heating intensity in the lateral direction along the surface in silicon strips. Melting of silicon for 17 s caused by the joule heating resulted in the formation of 4-8-m-long crystalline grains. The change in the film thickness was at most 6 nm in the crystallized region. There was a tensile stress of 5:6 Â 10 8 Pa in the film. The heat flow simulation demonstrated that the solidification occurred in the lateral direction according to the temperature gradient and that the solid/liquid interface moved in the lateral direction at the velocity of about 1-2 m/s.

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Rapid crystallization of silicon films using Joule heating of metal films

Cited by 21 publications

References 1 publication

Progress in fabrication technologies of polycrystalline-silicon thin-film transistors at low temperatures

Progress in fabrication technologies of polycrystalline-silicon thin-film transistors at low temperatures

Crystallization of silicon films by rapid joule heating method

Crystalline Grain Growth in the Lateral Direction for Silicon Thin Films by Electrical Current-Induced Joule Heating

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