Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT

Shaveta, Maali; Chaujar, Rishu

doi:10.1007/s10854-020-04216-7

Cited by 31 publications

(10 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This would produce a range of useful liquid products while also forming an interesting solid material with semiconducting properties. The solid product can be removed and dried, which potentially could be implemented in other applications such as electronic devices, , hydrogen sensing, and biomolecule detection . Accordingly, there is room for future study in tuning the process parameters such as CO 2 feed, NH 4 OH concentration, and sonication reaction conditions to either maximize liquid production or tailor it toward Ga nitride and oxynitride production to control purity, morphology, and particle size depending on the desired application.…”

Section: Resultsmentioning

confidence: 99%

Sonochemical CO₂ Reduction to Acetamide and Liquid C₂₊ Oxygenates Using a Liquid Metal Gallium-Based Reductant

Babikir,

Oloye,

Ostrikov

et al. 2024

Chem. Mater.

View full text Add to dashboard Cite

Carbon dioxide emission is a major cause of environmental concern, such as global warming and ocean acidification. Therefore, there is an ongoing search for feasible carbon dioxide reduction processes that utilize renewable energy to convert CO 2 into a valuable product. Here, we report a versatile sonochemical process for the permanent removal and conversion of carbon dioxide into acetamide and liquid oxygenates using a Ga liquid metal-based reductant. Liquid metals are ideal for CO 2 reduction due to their notable catalytic properties at low temperatures, nontoxicity, and relatively low cost. The process involves ultrasonication of water-suspended liquid Ga droplets, leading to the formation of GaOOH, which is further sonicated in the presence of an aqueous solution of NH 4 OH with a CO 2 feed at a low temperature of 70 °C. Liquid C 2 and C 3 oxygenate products were formed including industry-relevant acetamide, ethanol, and acetone platform chemicals. In addition, solid-phase gallium nitride and oxynitride nanomaterials were formed, which could be utilized in various catalytic and electronic applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Sonochemical CO₂ Reduction to Acetamide and Liquid C₂₊ Oxygenates Using a Liquid Metal Gallium-Based Reductant

Babikir,

Oloye,

Ostrikov

et al. 2024

Chem. Mater.

View full text Add to dashboard Cite

show abstract

“…The presence of biomolecules is simulated by introducing different dielectric constants in the embedded cavities. The simulation was performed in the ideal case (cavity 100% fill rate of the biomolecules in the cavity), which is similar to the previous reports [30,31]. The dielectric constants of various neutral biomolecules used in this work are depicted in table 1 [32,33].…”

Section: Device Structure and Theoretical Modelmentioning

confidence: 97%

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Liu,

Ma,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T-gate HEMT by numerical simulation. The results indicate that the N-polar GaN/InAlN MOS-HEMT biosensor has higher sensing sensitivity than the Ga-polar MOS-HEMT and N-polar T-gate HEMT biosensors. Furtherly, to improve the sensing performance of N-polar MOS-HEMT, the influence of cavity dimensions, GaN channel layer thickness, and InAlN back barrier layer thickness on device performance was investigated. It is demonstrated that the sensitivity of the biosensor increases as the cavity height decreases and the cavity length increases. Therefore, the sensing performance of the N-polar MOS-HEMT device will be enhanced by thinning the GaN channel layer thickness or increasing the InAlN back barrier thickness, which can be mainly attributed to the variation of the energy band structure and 2DEG concentration in the HEMT heterostructure. Finally, the highest sensitivity can be obtained for the N-polar MOS-HEMT with 6-nm-thick GaN channel layer, 30-nm-thick InAlN back barrier layer, and two 0.9-μm-long and 5-nm-high cavities. This work provides structural optimal design guidance for the N-polar HEMT biosensor.

show abstract

“…These superior properties attracted the extensive attention of researchers to develop the high-power amplifier for image sensing, remote sensing, radar, and space research. [1][2][3] Several research papers have been published on AlGaN/GaN HEMTs [1][2][3][4][5][6][7][8] for high RF applications. To achieve the operating frequency in the millimeter range, a reduction of the device geometry is required.…”

Section: Introductionmentioning

confidence: 99%

“…The InAlN/GaN heterojunction has a large band discontinuity and strong polarization effect, allowing the large 2DEG formation in the device. The 2DEG concentration can be calculated using Equation(7) 34.…”

mentioning

confidence: 99%

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Sharma

Chaujar

2022

Int J RF Mic Comp-Aid Eng

Self Cite

View full text Add to dashboard Cite

The DC and RF performance of ultra-scaled 10 nm E mode InAlN/AlN HEMT with polarized doped buffer has been investigated. The proposed device has the feature of polarized doped buffer, heavily doped source/drain region, and recessed T-gate structure. The polarization-induced doping in the buffer layer bent the conduction band upwardly convex, which enhanced the 2DEG confinement, reduced the buffer leakage current, and significantly uplifted the breakdown voltage (33 V), which is 5 times higher than the conventional InAlN/AlN GaN buffer HEMT (8 V). The short channel effect was further reduced by the recessed gate engineering (high on/off ratio 10 9 , subthreshold swing 78 mV/dec, and DIBL 100 mV/V), and smaller 10 nm foot length of Tgate reduced the parasitic capacitance, which uplifts the RF parameters of the proposed device. The proposed device exhibits a high current density of 2.8 A/ mm, transconductance 1.55 S/mm, cutoff frequency f T (583 GHz), and maximum oscillation frequency f max (840 GHz). At room temperature, the calculated carrier density and mobility are 2.8 Â 10 13 cm À2 and 1250 cm 2 /Vs. The large Jhonson figure of merit (f T . V BR ) 19.23 THz and (f T . f max ) 1/2 699 GHz shows the potential of the proposed device for high-power millimeter-wave applications.

show abstract

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT

Cited by 31 publications

References 26 publications

Sonochemical CO₂ Reduction to Acetamide and Liquid C₂₊ Oxygenates Using a Liquid Metal Gallium-Based Reductant

Sonochemical CO₂ Reduction to Acetamide and Liquid C₂₊ Oxygenates Using a Liquid Metal Gallium-Based Reductant

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Contact Info

Product

Resources

About

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT

Cited by 31 publications

References 26 publications

Sonochemical CO2 Reduction to Acetamide and Liquid C2+ Oxygenates Using a Liquid Metal Gallium-Based Reductant

Sonochemical CO2 Reduction to Acetamide and Liquid C2+ Oxygenates Using a Liquid Metal Gallium-Based Reductant

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Contact Info

Product

Resources

About

Sonochemical CO₂ Reduction to Acetamide and Liquid C₂₊ Oxygenates Using a Liquid Metal Gallium-Based Reductant

Sonochemical CO₂ Reduction to Acetamide and Liquid C₂₊ Oxygenates Using a Liquid Metal Gallium-Based Reductant