“…Recently, however, the application of in situ synchrotron X-ray imaging experiments has allowed real-time visualization of IMC growth . Such experiments have shown that the IMC growth rate between Sn and Cu-6 wt %Ni (Cu6Ni) is much higher than Sn with a Cu substrate. , Several studies have been performed to investigate the reaction of Ga- and Cu-based substrates. ,− It has been found that Ni-containing substrates accelerate the formation of IMC layers at room temperature and the growth rate of Ga intermetallics when reacting with Cu6Ni substrates is fast compared with other Cu–Ni substrates, and a similar phenomenon has been observed during Sn and Cu–Ni reactions. , When Ga reacts with Cu substrates, a thin IMC layer of Cu 9 Ga 4 forms close to the substrate, and a significantly thicker layer of CuGa 2 forms above this layer . However, when Ni is present in the substrate, the IMC layer becomes more complex, a nanocrystalline IMC layer of Ga 5 Ni and CuGa 2 forms close to the substrate, and a large layer of CuGa 2 forms further away .…”