2024
DOI: 10.1063/5.0232083
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Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN

Keita Kataoka,
Tetsuo Narita,
Kazuyoshi Tomita
et al.

Abstract: Toward p-type GaN formation by Mg ion implantation (I/I) applicable to devices, depth-resolved photoluminescence (PL) revealed key behaviors during activation annealing for precise profile control, such as Mg substitution into Ga-sites (MgGa) and recovery of I/I defects. Depth profiles of the MgGa acceptor concentration were measured for Mg-I/I and Mg/N-I/I samples after ultra-high-pressure annealing at 1300 °C for 1–60 min. The cycle of low-damage dry etching and PL measurement was repeated over the I/I depth… Show more

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