Rapid partial melt crystallization of silicon for monolithic three-dimensional integration

Texture development and grain boundary faceting in an excimer laser-crystallized silicon thin filmCrystalline orientation of polycrystalline silicon with disklike grains produced by silicide-mediated crystallization of amorphous siliconThe ability to produce a known crystalline orientation in semiconductor materials is essential for many applications, including monolithic three-dimensional integration of devices. In particular, crystallization must be done without exceeding the thermal budget of surrounding or underlying devices. Using a 532 nm laser pulse of 2 ms duration on a 185 nm thick amorphous silicon film, the authors demonstrate that partial melting of silicon can yield crystallites several microns in size with a strong ͗001͘ preferential orientation. They investigate the effects of laser pulse duration, film thickness, and heat flow rate on the degree of texturing. By using a thinner silicon film and reducing the laser pulse duration further, such a process could be compatible with the thermal constraints of three-dimensional integration.

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Preferential orientation effects in partial melt laser crystallization of silicon

Witte

Masbou

Crnogorac

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Rapid partial melt crystallization of silicon for monolithic three-dimensional integration

Abstract: Texture development and grain boundary faceting in an excimer laser-crystallized silicon thin film

Cited by 1 publication

References 6 publications

Preferential orientation effects in partial melt laser crystallization of silicon

Preferential orientation effects in partial melt laser crystallization of silicon

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