Rapid Reduction of Graphene Oxide Thin Films on Large-Area Silicon Substrate

Abstract

Graphene oxide thin films were fabricated on 8-inch silicon/silicon dioxide (Si/SiO2) wafers for nanoelectronic applications. The fabrication was performed using an ultrasonic spray coating method and reduced by rapid thermal processing (RTP). The micrometer-sized droplets from an ultrasonic spray of stable dispersion Graphene Oxide (GO) in ethanol form uniforms films on large-area silicon substrates. Optical microscope images clearly showed uniform thin films resulting from the overlapped of GO dispersion droplets. The chemical and structural parameter characterization were performed by field emission scanning electron microscopy and X-ray photoelectron spectroscopy (XPS). The spray coating process using an ultrasonic atomizer system with optimum parameters and the thermal reduction process using RTP at 1100 °C produces low sheet resistance values ranging from 1 to 4 kOhms/sq with non-uniformity less than 20%.

Amphiphilic Grafted Polymers Based on Citric Acid and Aniline Used to Enhance the Antifouling and Permeability Properties of PES Membranes

“…In Figure 4 a, the survey spectrum indicates that carbon (C) and oxygen (O) elements were present in CA; nitrogen (N) appeared in CA–g–AN following the grafting of AN. As can be seen in Figure 4 b, the deconvoluted C 1s spectrum of CA exhibited three main peaks at 285.04 eV, 286.94 eV, and 289.14 eV, corresponding with C–C, C–O, and C=O, respectively [ 40 , 41 , 42 ]. Regarding CA–g–AN in Figure 4 c, during the analysis of the N 1s spectrum, the peak at 399.24 eV could be primarily attributed to the C−N bonds that originated from the amide bond between CA and AN, thus confirming that CA–g–AN was successfully synthesized.…”

Optimization of learning algorithms in multilayer perceptron (MLP) for sheet resistance of reduced graphene oxide thin-film

“…The process was repeated for five runs of the experiment. The GO samples were then reduced through a high temperature of the thermal reduction process to produce rGO samples [25]. The four-point machine measured electrical conductivity, which is the sheet resistance at 49 different coordinate points distributed radially from the center of the whole 8-inch SiO2 wafer shown in Figure 2 right after the reduction process.…”