Rapid-response, low-detection-limit, positive-negative air pressure sensing: GaN chips integrated with hydrophobic PDMS films

Abstract

Despite the importance of positive and negative pressure sensing in numerous domains, the availability of a single sensing unit adept at handling this dual task remains highly limited. This study introduces a compact optical device capable of swiftly and precisely detecting positive and negative pressures ranging from −35 kPa to 35 kPa. The GaN chip, which serves as a core component of the device, is monolithically integrated with light-emitting and light-detecting elements. By combining a deformable PDMS film coated with a hydrophobic layer, the chip can respond to changes in optical reflectance induced by pressure fluctuations. The integrated sensing device has low detection limits of 4.3 Pa and −7.8 Pa and fast response times of 0.14 s and 0.22 s for positive and negative pressure variations, respectively. The device also demonstrates adaptability in capturing distinct human breathing patterns. The proposed device, characterized by its compactness, responsiveness, and ease of operation, holds promise for a variety of pressure-sensing applications.