Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa₂O₃:N/GaN p‐i‐n Heterojunction Fabricated by a Reversed Substitution Growth Method

Abstract

This work reports a high‐detectivity solar‐blind deep ultraviolet photodetector with a fast response speed, based on a nitrogen‐doped graphene/βGa2O3/GaN p‐i‐n heterojunction. The i layer of βGa2O3 with a Fermi level lower than the central level of the forbidden band of 0.2 eV is obtained by reversed substitution growth with oxygen replacing nitrogen in the GaN matrix, indicating the majority carrier is hole. X‐ray diffractometershows that the transformation of GaN into βGa2O3 with (−201) preferred orientation at temperature above 900 °C in an oxygen ambient. The heterojunction shows enhanced self‐powered solar blind detection ability with a response time of 3.2 µs (rise)/0.02 ms (delay) and a detectivity exceeding 1012 Jones. Under a reverse bias of −5 V, the photoresponsivity is 8.3 A W−1 with a high Ilight/Idark ratio of over 106 and a detectivity of ≈9 × 1014 Jones. The excellent performance of the device is attributed to 1) the continuous conduction band without a potential energy barrier, 2) the larger built‐in potential in the heterojunction because of the downward shift of Fermi energy level in β‐Ga2O3, and 3) an enhanced built‐in electric field in the βGa2O3 due to introducing p‐type graphene with a high hole concentration of up to ≈1020 cm−3.

Enhanced Performance of Self-Powered Ga2O3/ZnO:V Heterojunction Solar-Blind Ultraviolet Photodetectors by Coupling Ferroelectricity and Piezoelectricity

“…Additionally, the corresponding strain-modulated open-circuit voltage ( V oc ) and responsivity ( R ) are shown in Figure d, where V oc and R show an increasing tendency as a function of tensile strain. The R was calculated using the following equation: R = false( I normalphoto − I dark false) / S P where I photo is the photocurrent, I d is the dark current, S is the active area, and P is the light power density. The V oc and R can be enhanced from 1.51 V and 14.8 mA/W at strain-free to 1.63 V and 46.4 mA/W at 0.46% tensile strain, increased by 7.9% and 213.5%, respectively.…”