We designed several single flux quantum (SFQ) flipflops and logic gates composed of Josephson junctions (JJs) and shifted JJs (-JJs) to quantitatively evaluate effectiveness of introduction of -JJs into the SFQ logic circuit. One-output flip-flops and logic gates were designed on the basis of the circuit design methodology we built for the SFQ circuit containing -JJs. The designed flip-flops and logic gates have wide operating margins, the dc bias margins of larger than ±30% and device parameter margins of ±18%, though the static power consumption are reduced compared to conventional ones composed of JJs. We found that the difference in the critical current density between JJs and -JJs does not affect the operating margins of the SFQ flip-flop composed of JJs and -JJs. We devised a circuit structure of the delay flip-flop with complementary outputs composed of JJs and -JJs (-DFFC). The analog circuit simulation shows the dc-bias margin of the -DFFC is larger than ±33%. These results indicate that the large-scale SFQ logic circuit system can be implemented using the flip-flops and logic gates containing -JJs. Index Terms-Single-flux-quantum (SFQ) circuit, -shifted Josephson junction, flip-flop I. INTRODUCTION NERGY Consumption for Information and Communication Technology (ICT) has drastically increased for decades.Total energy consumption for ICT devices in the world has already reached 1 PWh/year in 2017, which is larger than annual energy consumption in Japan, and is estimated to keep increasing in the future [1]. However, semiconductor integrated circuit technology, which has been supporting the ICT development, is facing several obstacles [2]. Among the obstacles, power consumption is the most serious problem of the semiconductor complementary metal-oxide-semiconductor (CMOS) integrated circuit. In this sort of situation, beyond-CMOS devices that can overcome limitation of CMOS devices, have been studied [3]. Among various beyond-CMOS devices, superconducting digital devices, including single-fluxquantum (SFQ) devices [4,5] and its improved versions have a high-speed operation characteristic with ultra-high energy ef-Manuscript receipt and acceptance dates will be inserted here.