Rapid-thermal-annealing-induced microstructural evolution of Au/Ni/β-Ga2O3 Schottky diodes correlated with their electrical properties

Janardhanam, V.; Boldbaatar, Sosorburam; Jyothi, I.; Kim, Dongho; Shim, Kyu–Hwan; Choi, Chel‐Jong

doi:10.1016/j.jallcom.2022.165622

Cited by 9 publications

(1 citation statement)

References 46 publications

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“…However, there is no report of a Ni/β-Ga 2 O 3 reaction for Ni deposited at room temperature. Other authors have examined this interface via high-resolution TEM (HRTEM)/STEM and observed an atomically sharp interface with no evidence of chemical interdiffusion. − …”

Section: Discussionmentioning

confidence: 99%

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Lyle

House

Yang

et al. 2022

ACS Appl. Electron. Mater.

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Au/β-Ga2O3 Schottky contacts deposited at room temperature via electron-beam evaporation are characterized electrically with current density–voltage (J–V) and capacitance–voltage (C–V) measurements. The ideality factor and Schottky barrier heights measured from J–V and C–V are determined to be 1.32, 1.37 eV, and 1.98 eV, respectively. Due to the peculiarities of the electrical properties of the Au/β-Ga2O3 Schottky contacts, scanning transmission electron microscopy (STEM) was performed. High-angle annular dark-field (HAADF)-STEM imaging reveals an inhomogeneous chemical reaction occurred at the metal–semiconductor interface. The reaction is signified by void formation 5–20 nm below the interface, Ga diffusion into Au at the interface, and Ga interstitial diffusion toward the interface. Energy-dispersive X-ray spectroscopy (EDS) mapping shows Ga diffusion into the Au contact region accompanied by a transitional region of 4–5 nm.

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Section: Discussionmentioning

confidence: 99%

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Lyle

House

Yang

et al. 2022

ACS Appl. Electron. Mater.

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Fabrication and Characterization of Silicon Tunnel Diodes Doped by Short-Time Rapid Thermal Annealing

Sasaki,

Masui,

Miura

et al. 2024

Lecture Notes in Networks and Systems

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Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment

Janardhanam,

Kim,

Jyothi

et al. 2024

Colloids and Surfaces A: Physicochemical and Engineering Aspect

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Rapid-thermal-annealing-induced microstructural evolution of Au/Ni/β-Ga2O3 Schottky diodes correlated with their electrical properties

Cited by 9 publications

References 46 publications

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Fabrication and Characterization of Silicon Tunnel Diodes Doped by Short-Time Rapid Thermal Annealing

Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment

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Rapid-thermal-annealing-induced microstructural evolution of Au/Ni/β-Ga2O3 Schottky diodes correlated with their electrical properties

Cited by 9 publications

References 46 publications

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

Fabrication and Characterization of Silicon Tunnel Diodes Doped by Short-Time Rapid Thermal Annealing

Enhancement of device performance in β-Ga2O3 Schottky barrier diodes with tetramethylammonium hydroxide treatment

Contact Info

Product

Resources

About

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface