Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

We report GaSb-based laser diodes (LDs) grown on on-axis (001) Si substrates and emitting at 2.3 µm. Two series of LDs were studied and compared. For the first series, a GaAs-based buffer layer was first grown by metal organic chemical vapor deposition (MOCVD) before growing the laser heterostructure by molecular-beam epitaxy (MBE). For the second series, a MOCVD GaSb buffer layer was added between the MOCVD GaAs buffer layer and the MBE laser heterostructure. Both series of LDs exhibited threshold currents in the 50–100 mA range and several mW output power at room temperature. They demonstrated continuous wave operation (CW) up to 70°C (set-up limited) without thermal rollover. Broad area LDs exhibited record threshold-current densities in the 250–350 A.cm−2 range for the second series of LDs, in spite of cracks that appeared during device processing. These results show that the design and fabrication steps of the buffer-layer stacks are critical issues in the epitaxial integration of GaSb-based optoelectronic devices on Si substrates and offer room for much performance improvement.

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GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

Monge-Bartolomé

Shi

Lai

et al. 2021

Opt. Express

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Effects of chemical activating agents on physical properties of activated carbons – a commentary

Amran

Zaini

2020

Water Practice and Technology

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Well-developed surface areas and porous structures that render high adsorption capacity are necessary for pollutant removal from wastewater by activated carbons. Activated carbons from natural resources, and agricultural and industrial waste materials are produced using chemical agents, including KOH, H3PO4, K2CO3, ZnCl2 and NaOH. This study is intended to highlight the effects of those agents on the physical properties of the activated carbons. The operating conditions, i.e., temperature, time and ratio show an interplay towards the physical properties at varying degree. The yield, pore size, mesoporosity and surface area of activated carbons derived using different chemical agents correlate well with the impregnation ratio. Generally, the pore size, mesoporosity and surface area increase, while the yield decreases with increasing ratio (over a given range). Higher ratio and temperature are recommended for KOH, K2CO3 and NaOH activation, to endow activated carbons with greater surface area.

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Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

Cited by 2 publications

References 22 publications

GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

Effects of chemical activating agents on physical properties of activated carbons – a commentary

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