Rapid thermal stability of refractory metal and silicide contacts on p-InP

Abstract

The rapid thermal stability of Ti, Ta, TiSi,, and TaSi, contacts on p-InP is investigated. The annealing temperature varies in the range 700 to 900°C and the annealing time is 10s. The TiSi, and TaSi, contacts show superior stability compared with the Ti and Ta contacts. The TaSi, contacts are found more stable than the TiSi, contacts. A defect model is used to explain the observations.