Rapidly Produced Thin Films: Laser-Plasma Induced Surface Reactions

Schaaf, Peter; Carpene, E.; Kahle, Michael; Han, Meng

doi:10.1007/3-540-45618-x_17

Cited by 1 publication

(1 citation statement)

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“…Many oxide, carbide, or nitride layers on refractory metals are produced by RCVD. [4] A RCVD process has also been developed to coat the surface of carbon fibres with a carbide layer. [5] As other refractory MAX-phases, the ternary compound Ti 3 SiC 2 (hexagonal symmetry, space group P6 3 /mmc, a = 0.3068 nm, c = 1.7669 nm [6] ) possesses a set of mechanical properties of special interest for structural applications at high temperature.…”

Section: Introductionmentioning

confidence: 99%

Phase Equilibria and Reactive Chemical Vapor Deposition (RCVD) of Ti3SiC2

Fakih

Jacques

Dezellus

et al. 2008

J Phs Eqil and Diff

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The present article addresses the issue of properly modelling the thermodynamic aspect of chemical reactions proceeding at the solid/gas interface in a multi-component system. Attention is more especially paid to the formation of Ti 3 SiC 2 by reactive chemical vapor deposition (RCVD) on a silicon carbide substrate heated at 1100°C. A deposition diagram has been calculated by Gibbs free energy minimization in the C-Cl-H-Si-Ti quinary system. It is shown that this deposition diagram can account for experimental results obtained by RCVD only for the short period of time during which the reaction layer is thin and discontinuous. For thick, dense and continuous reaction layers, the deposition diagram is no longer appropriate and reactiondiffusion models developed for solid-state diffusion couples have to be used in place of it.

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Section: Introductionmentioning

confidence: 99%