Rapidly Solidified Melt-spun Bi-Sn Ribbons:  Surface Composition Issues

Ashram, Tarek El; Carapeto, Ana P.; Rego, A.M. Botelho do

doi:10.24297/jap.v11i5.369

Cited by 3 publications

(3 citation statements)

References 28 publications

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“…The deconvoluted peaks at 156.5 and 162 eV correspond to the bismuth, whereas peaks centered at 158.7 and 164.1 eV, respectively, represent oxidized bismuth due to the surface oxidation of nanosheets, indicating the presence of both elemental bismuth and oxidized bismuth, in agreement with the previously reported literature . It has also been reported that polishing the surface of bismuth can reduce the oxide layer/content significantly …”

Section: Resultssupporting

confidence: 90%

“… 39 It has also been reported that polishing the surface of bismuth can reduce the oxide layer/content significantly. 40 …”

Section: Resultsmentioning

confidence: 99%

“…39 It has also been reported that polishing the surface of bismuth can reduce the oxide layer/content significantly. 40 Due to the agglomeration and irregular morphology, the TEM images were inconclusive in determining the actual morphology of bismuth nanoparticles, i.e., whether they are nanosheets or have a particle-like morphology. Therefore, AFM was used to further investigate the morphology of bismuth.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Selective Synthesis of Bismuth or Bismuth Selenide Nanosheets from a Metal Organic Precursor: Investigation of their Catalytic Performance for Water Splitting

et al. 2021

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The development of cost-effective, functional materials that can be efficiently used for sustainable energy generation is highly desirable. Herein, a new molecular precursor of bismuth (tris(selenobenzoato)bismuth(III), [Bi(SeOCPh) 3 ]), has been used to prepare selectively Bi or Bi 2 Se 3 nanosheets via a colloidal route by the judicious control of the reaction parameters. The Bi formation mechanism was investigated, and it was observed that the trioctylphosphine (TOP) plays a crucial role in the formation of Bi. Employing the vapor deposition method resulted in the formation of exclusively Bi 2 Se 3 films at different temperatures. The synthesized nanomaterials and films were characterized by p-XRD, TEM, Raman, SEM, EDX, AFM, XPS, and UV–vis spectroscopy. A minimum sheet thickness of 3.6 nm (i.e., a thickness of 8–9 layers) was observed for bismuth, whereas a thickness of 4 nm (i.e., a thickness of 4 layers) was observed for Bi 2 Se 3 nanosheets. XPS showed surface oxidation of both materials and indicated an uncapped surface of Bi, whereas Bi 2 Se 3 had a capping layer of oleylamine, resulting in reduced surface oxidation. The potential of Bi and Bi 2 Se 3 nanosheets was tested for overall water-splitting application. The OER and HER catalytic performances of Bi 2 Se 3 indicate overpotentials of 385 mV at 10 mA cm –2 and 220 mV, with Tafel slopes of 122 and 178 mV dec –1 , respectively. In comparison, Bi showed a much lower OER activity (506 mV at 10 mA cm –2 ) but a slightly better HER (214 mV at 10 mA cm –2 ) performance. Similarly, Bi 2 Se 3 nanosheets were observed to exhibit cathodic photocurrent in photoelectrocatalytic activity, which indicated their p-type behavior.

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Section: Resultssupporting

confidence: 90%

“… 39 It has also been reported that polishing the surface of bismuth can reduce the oxide layer/content significantly. 40 …”

Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Selective Synthesis of Bismuth or Bismuth Selenide Nanosheets from a Metal Organic Precursor: Investigation of their Catalytic Performance for Water Splitting

et al. 2021

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The Layer-Inserting Growth of Antiferromagnetic Topological Insulator MnBi2Te4 Based on Symmetry and Its X-ray Photoelectron Spectroscopy

Jiao

Wang

et al. 2021

J Supercond Nov Magn

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The Layer-inserting Growth of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ Based on Symmetry and Its X-ray Photoelectron Spectroscopy

Jiao¹,

Wang²,

Wang³

et al. 2020

Preprint

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The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property makes it a potential material to realize the quantum anomalous Hall effect (QAHE) at relative high temperature. Until now, only MnBi 2 Te 4 is predicted and grown successfully. The other MB 2 T 4 -family materials predicted (MB 2 T 4 :M=transition-metal or rare-earth element, B=Bi or Sb, T=Te, Se, or S) with not only antiferromagnetic topological property but also rich and exotic topological quantum states and dynamically stable (or metastable) structure have not been realized on experiment completely. Here, MnBi 2 Te 4 single crystals have been grown successfully and tested. It shows typical antiferromagnetic character, with Neel temperature of 24.5K and a spin-flop transition at H≈35000 Oe, 1.8K. After obtaining MnBi 2 Te 4 single crystals, we have tried to synthesize the other members of MB 2 T 4 -family materials, but things are not going so well. Then it inspires us to discuss the growth mechanism of MnBi 2 Te 4 . The growth mode may be the layer-inserting growth mode based on symmetry, which is supported by our X-ray photoelectron spectroscopy (XPS) measurement. The XPS measurement combing with the + ion sputtering is done to investigate the chemical state of MnBi 2 Te 4 . Binding energies (BE) of the MnBi 2 Te 4 -related contributions to Mn2p and Te3d spectra agree well with those of inserting material -MnTe. Rising intensity of the Mn2p satellite for divalent Mn (bound to chalcogen) with atomic number of ligand (from MnO to MnBi 2 Te 4 ) has been observed, thus suggesting classification of MnBi 2 Te 4 as the charge-transfer compound. Understanding the growth mode of MnBi 2 Te 4 can help us to grow the other members of MB 2 T 4 -family materials.

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Rapidly Solidified Melt-spun Bi-Sn Ribbons: Surface Composition Issues

Cited by 3 publications

References 28 publications

Selective Synthesis of Bismuth or Bismuth Selenide Nanosheets from a Metal Organic Precursor: Investigation of their Catalytic Performance for Water Splitting

Selective Synthesis of Bismuth or Bismuth Selenide Nanosheets from a Metal Organic Precursor: Investigation of their Catalytic Performance for Water Splitting

The Layer-Inserting Growth of Antiferromagnetic Topological Insulator MnBi2Te4 Based on Symmetry and Its X-ray Photoelectron Spectroscopy

The Layer-inserting Growth of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ Based on Symmetry and Its X-ray Photoelectron Spectroscopy

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