Abstract:Nitridosilicates are structurally built up on three-dimensional SiN4 tetrahedral networks, forming a very interesting class of materials with high thermomechanical properties, hardness, and wide band gap. Traditionally, nitridosilicates are often used as structural materials such as abrasive particles, cutting tools, turbine blade, etc. Recently, the luminescence of rare earth doped nitridosilicates has been extensively studied, and a novel family of luminescent materials has been developed. This paper reviews… Show more
“…[1][2][3][4] To date, β-SiAlON:Eu, as the state-of-the-art green phosphor, is widely applied to fabricate advanced wide-gamut backlighting device due to its favourable properties, such as narrow emission bandwidth (45-55 nm), excellent thermal quenching behavior (~10% emission loss at 150 °C), and high external quantum efficiency. However, the origin of narrow-band-emission in β-SiAlON:Eu and the underlying reason for tunable photoluminescence through replacing Si-N by Al-O remains under debate.…”
Narrow-band green-emitting phosphor β-SiAlON:Eu has been widely used in advanced wide-gamut backlighting devices. However, the origins for unusual sharp lines in photoluminescence emission at room temperature and tunable narrow-bandemission tailored by reducing Al-O in β-SiAlON:Eu are still unclear. Here, the presence of sharp-line fine structure in the emission spectra of β-SiAlON:Eu is mainly due to purely electronic transitions (zero phonon lines) and their vibronic repetitions resulted from the multi-microenvironment around Eu 2+ ions that has been revealed by relative emission intensity of sharp line depends on excitation wavelength and monotonously increasing decay time. The specific features of the Eu 2+ occupying interstitial sites indicate that the effect of crystal field strength can be neglected. Therefore the enhanced rigidity and higher ordering structure of β-SiAlON:Eu with decreasing the substitution of Si-N by Al-O become the main factors in decreasing electron-lattice coupling and reducing inhomogeneous broadening, favouring the blue-shift and narrow of the emission band, the enhanced thermal stability, as well as the charge state of Eu 2+ . Our results provide new insights for explaining the reason for narrow-band-emission in β-SiAlON:Eu, which will deliver an impetus for the exploration of phosphors with narrow band and ordering structure.
“…[1][2][3][4] To date, β-SiAlON:Eu, as the state-of-the-art green phosphor, is widely applied to fabricate advanced wide-gamut backlighting device due to its favourable properties, such as narrow emission bandwidth (45-55 nm), excellent thermal quenching behavior (~10% emission loss at 150 °C), and high external quantum efficiency. However, the origin of narrow-band-emission in β-SiAlON:Eu and the underlying reason for tunable photoluminescence through replacing Si-N by Al-O remains under debate.…”
Narrow-band green-emitting phosphor β-SiAlON:Eu has been widely used in advanced wide-gamut backlighting devices. However, the origins for unusual sharp lines in photoluminescence emission at room temperature and tunable narrow-bandemission tailored by reducing Al-O in β-SiAlON:Eu are still unclear. Here, the presence of sharp-line fine structure in the emission spectra of β-SiAlON:Eu is mainly due to purely electronic transitions (zero phonon lines) and their vibronic repetitions resulted from the multi-microenvironment around Eu 2+ ions that has been revealed by relative emission intensity of sharp line depends on excitation wavelength and monotonously increasing decay time. The specific features of the Eu 2+ occupying interstitial sites indicate that the effect of crystal field strength can be neglected. Therefore the enhanced rigidity and higher ordering structure of β-SiAlON:Eu with decreasing the substitution of Si-N by Al-O become the main factors in decreasing electron-lattice coupling and reducing inhomogeneous broadening, favouring the blue-shift and narrow of the emission band, the enhanced thermal stability, as well as the charge state of Eu 2+ . Our results provide new insights for explaining the reason for narrow-band-emission in β-SiAlON:Eu, which will deliver an impetus for the exploration of phosphors with narrow band and ordering structure.
“…This is attributed to the rapid cooling that occurs in the melt synthesis using an arc imaging furnace. Figure 4 shows the excitation and emission spectra of Ba 3 -(Sc 0.94 Ho 0.06 ) 4 24) The emission peak intensities of the sample synthesized by the melt synthesis method are 1.79 times greater than those of the sample synthesized by the solidstate reaction. The reason for this improvement is attributed to the high dispersion of Ho 3+ in the sample prepared by melt synthesis.…”
Section: Resultsmentioning
confidence: 99%
“…To investigate the dispersion of Ho 3+ ions in both Ba 3 (Sc 0.94 -Ho 0.06 ) 4 O 9 samples, X-ray mapping images of Ba, Sc, and Ho were measured by EPMA. The results are shown in Fig.…”
Blue-light excitable, green-light emitting Ba 3 (Sc 1¹x Ho x ) 4 O 9 phosphors were successfully synthesized in the single-phase form by a melt synthesis method for the first time. These phosphors show sharp green light emission under blue light (455 nm) excitation. The principal green light emission peak observed at 555 nm corresponds to the transition from
“…Solid state lighting based on white light emitting diodes (LED) are well known for display devices and the inorganic phosphors have a great attention for their useful advantages in the devices [1]. Inorganic phosphors are exact materials for blue-chip excitation with intensive luminescence and high reliability.…”
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