Rare-earth elements in the technology of III–V compounds and devices based on these compounds

Gorelenok, A. T.; Kamanin, A. V.; Shmidt, N. M.

doi:10.1134/1.1601656

Cited by 11 publications

(5 citation statements)

References 18 publications

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“…In some materials, RE dopants can reduce the electron density to levels as low as 10 13 cm -3 with a simultaneous increase in the carrier mobility, indicating that RE ions do not act as donor-or acceptor-like impurities. The phenomenon of marked purification of InP and InGaAs solid solutions in the course of liquid-phase epitaxy as a result of doping with RE ions is the one of the best known examples in the literature [28,29,[34][35][36].…”

mentioning

confidence: 99%

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Łożykowski¹,

Jadwisienczak

2007

Physica Status Solidi (b)

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Investigations of the luminescent properties of Pr-, Eu-, Tb-and Tm-implanted AlN thin films at temperature in the range 9 -830 K are reported. The temperature studies of photoluminescence and cathodoluminescence spectra revealed unexpectedly weak thermal quenching for all investigated rare earth (RE) ions. The maximum CL emission is observed from Eu (red) at 485 K, Tb (green) at 590 K and Tm (blue) at 530 K, respectively. For Tb-and Tm-doped AlN samples, temperature-dependent crossrelaxation processes were observed. Photoluminescence excitation spectra, obtained under UV excitation in the spectral range 200 -400 nm, exhibit several bands. It is proposed that the RE ions exist in semiconductors as isolated ions (singlet), nearest-neighbor (nn) ion pairs (dimer), and three ions (trimer). The Koster -Slater and simple spherical potential-well models for RE-structured isovalent (RESI) hole trap are proposed. The exciton binding energies of RESI traps are calculated and compared with experimental thermal-quenching energies. The energy-transfer processes between the AlN host and the 4f-shell systems are emphasized as the main mechanisms for thermal-quenching processes rather than nonradiative decay of 4f transitions.

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mentioning

confidence: 99%

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Łożykowski¹,

Jadwisienczak

2007

Physica Status Solidi (b)

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“…These compounds are insoluble in indium. The effective concentration of phosphorus is diminished and so is the supersaturation (Gorelenok et al, 2003). This supplementary (negative) supersaturation may vary with RE concentration in the growth solution.…”

Section: Methodsmentioning

confidence: 99%

“…REs in the semiconductor technology have been thoroughly investigated since the last quarter of the 20 th century also in Russia. Studies concerning the use of rare-earth elements in the liquid-phase epitaxy of the InP, InGaAsP, InGaAs, and GaP compounds and with the fabrication of various optoelectronic and microelectronic devices and structures based on these compounds are summarized in two review articles (Gorelenok et al, 1995;Gorelenok et al, 2003). Reports on RE oxide admixtures in the growth technology of semiconductors are limited to praseodymium oxide (Novák et al, 1989).…”

Section: Present Statusmentioning

confidence: 99%

Semiconductor technologies

2009

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Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.High costs, long manufacturing cycles, and enormous increase in computing power are behind a recent rapid progress of the modelling, simulation, optimisation, and design of semiconductor devices. The first two chapters present the state-of-the-art in modelling of semiconductor processes and devices. Several examples are given: simulation of the switching characteristics of SiC GTO, MOSFET DC modelling for distortion analysis, or high-k dielectricsemiconductor modelling. VIIIOptical technologies are the future of communication systems. Chapter 14 is a review of a device engineering method to provide high functionality of passive nonlinear vertical-cavity devices exploiting saturable absorption in semiconductor MQWs. Chapter 15 is a summary of the stateof-the-art of all-optical flip-flops based on semiconductor technologies. Chapter 16 reviews the current development of optical detection technologies on silicon photonics platform. In chapter 17, the authors describe the design, fabrication technology, and device performance of InP Mach-Zehnder modulator monolithically integrated with semiconductor optical amplifier. In chapter 18, the authors propose a new approach to ultra-fast all-optical signal processing based on quantum dot devices. Chapter 19 discusses present status and future direction of all-optical digital processing through semiconductor optical amplifiers.Finally, chapter 20 presents a new approach to biomedical monitoring and analysis of selected human cognitive processes.

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Section: Methodsmentioning

confidence: 99%

“…Studies concerning the use of rare-earth elements in the liquid-phase epitaxy of the InP, InGaAsP, InGaAs, and GaP compounds and with the fabrication of various optoelectronic and microelectronic devices and structures based on these compounds are summarized in two review articles (Gorelenok et al, 1995;Gorelenok et al, 2003). Reports on RE oxide admixtures in the growth technology of semiconductors are limited to praseodymium oxide (Novák et al, 1989).…”

Section: Semiconductor Technologies 298mentioning

confidence: 99%

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Grym¹,

Procházková²,

Zavadil³

et al. 2010

Semiconductor Technologies

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Rare-earth elements in the technology of III–V compounds and devices based on these compounds

Cited by 11 publications

References 18 publications

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN

Semiconductor technologies

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

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