Rare-earth Epitaxial Films as a Platform for Quantum Information Manipulation

Abstract

Rare-earth ions in a solid form have discrete energy levels peculiar to the ionic species, and they are therefore expected to become an excellent platform material for quantum information manipulation. A promising candidate for this purpose is rare-earth epitaxial film such as erbium oxide (Er 2 O 3 ) film grown on a silicon substrate. This article describes the high-quality crystal growth and excellent optical characteristics of Er 2 O 3 epitaxial films for quantum information devices.