Rare-metal-free high-performance Ga-Sn-O thin film transistor

Matsuda, Tokiyoshi; Umeda, Kenta; Kato, Yuta; Nishimoto, Daiki; Furuta, Mamoru; Kimura, Mutsumi

doi:10.1038/srep44326

Cited by 79 publications

(39 citation statements)

References 44 publications

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“…5b and 5c). In the PBS test, the V th positively shifts by~6.6 V which is larger than that of sputtered GTO-TFTs under the same stress time [19]. We can observe a slightly decreased SS with the extension of time because more interface states…”

Section: Thin Film and Device Characterizationmentioning

confidence: 79%

“…In the previous reports [17,18], Ga is an oxygen vacancy inhibitor and can weaken the crystallinity of films. Recently, Matsuda et al [19] reported RF magnetron sputtered a-GaSnO (GTO)-TFTs with high mobility of 25.6 cm 2 V −1 s −1 at 350°C. Zhang et al [20] reported nanocrystalline Ga-rich GTO-TFTs with mobility of 1.03 cm 2 V −1 s −1 at 900°C.…”

Section: Introductionmentioning

confidence: 99%

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Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors

Ren

Yang

et al. 2018

Sci. China Mater.

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Gallium-tin oxide (GTO) semiconductor thin films were prepared by spin-coating with 2-methoxyethanol as the solvent. Their crystal structures, optical transparency, chemical states and surface morphologies, along with the electrical properties, were dependent on Ga contents and annealing temperatures. The optimized GTO channel layer was applied in the high-k Al 2 O 3 thin film transistor (TFT) with a low operation voltage of 2 V, a maximum field-effect mobility of 69 cm 2 V −1 s −1 , a subthreshold swing (SS) of 76 mV dec −1 , a threshold voltage of 0.67 V and an on-off current ratio of 1.8×10 7. The solution-processed amorphous-GTO-TFTs would promote the development of low-consumption, low-cost and high performance In-free TFT devices.

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Section: Thin Film and Device Characterizationmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors

Ren

Yang

et al. 2018

Sci. China Mater.

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“…An ITZO/IGZO bilayer structure is desirable for achieving high TFT performance because of the 2DEG layer formation at the heterointerface and high electron mobility of ITZO film resulting from partially substituting Sn 4+ for In 3+ . However, it is challenging to simultaneously obtain high mobility/on‐current and low off‐current in planar‐type heterojunction TFT devices .…”

Section: Electrical Properties Of the Indicated Mo Tfts (The Values Amentioning

confidence: 99%

Corrugated Heterojunction Metal‐Oxide Thin‐Film Transistors with High Electron Mobility via Vertical Interface Manipulation

Lee

Kim

et al. 2018

Advanced Materials

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A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin-indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO) and thick-ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off- and on-states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field-effect mobility >50 cm V s with an on/off current ratio of >10 and good operational stability (threshold voltage shift <1 V for a positive-gate-bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer-Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off-currents and high on-currents depending on the applied gate bias.

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“…We could explain crystallization of thin films in magnetic fields by the effect of ground vs excited states of metals, or by valence electron ordering. However, these two approaches were chosen based on the formation of metal ions in liquids and alloys [37] and the size of atom/ion/molecule effect [38]. Aluminium belongs to the boron group and, therefore, has three electrons in the last orbital with valence configuration ns 2 np 1 .…”

Section: Discussionmentioning

confidence: 99%

Inducing Crystallinity of Metal Thin Films with Weak Magnetic Fields without Thermal Annealing

et al. 2018

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Since the discovery of thin films, it has been known that higher crystallinity demands higher temperatures, making the process inadequate for energy-efficient and environmentally friendly methods of thin film fabrication. We resolved this problem by sparking metal wires in a 0.4 Tesla magnetic field at ambient conditions under ultra-pure nitrogen flow to replace the annealing of thin films, and thus designed an environmentally friendly and energy-efficient thin film fabrication method. We employed grazing incidence X-Ray Diffraction spectroscopy to characterize crystallinity of Iron, Nickel, Copper and Tungsten thin films prepared by a sparking discharge process in the presence of 0.4 T magnetic field at an ambient temperature of 25 °C. Control experiment was conducted by sparking without a magnetic field present and using ultra-pure nitrogen flow and ambient air containing oxygen. The Iron thin film prepared in ultra-pure nitrogen flow preserved crystallinity even after one year of ageing. Nickel exhibited higher crystallinity when sparked in nitrogen gas flow than when sparked in atmospheric air and was the only element to crystalize under atmospheric air. Tungsten successfully crystalized after just 40 min of sparking and aluminium failed to crystalize at all, even after 12 h of sparking under nitrogen flow.

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Rare-metal-free high-performance Ga-Sn-O thin film transistor

Cited by 79 publications

References 44 publications

Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors

Solution-processed amorphous gallium-tin oxide thin film for low-voltage, high-performance transistors

Corrugated Heterojunction Metal‐Oxide Thin‐Film Transistors with High Electron Mobility via Vertical Interface Manipulation

Inducing Crystallinity of Metal Thin Films with Weak Magnetic Fields without Thermal Annealing

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