Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques

Ultrafast Active Tuning of the Berreman Mode

“…Both the fast and slow decay components that we observed are well within reported values for carrier recombination in GaN. ,− For instance, Juršėnas et al have shown that the free-carrier lifetime in epitaxially grown GaN depends strongly on the concentration of defects (specifically, screw dislocations) in any given sample and can range from <10 ps to ∼1 ns . Although kinetic traces like those presented in Figure c are difficult to correlate directly to carrier concentration, we find that the dynamics do not appear to depend on excitation fluence, which is consistent with defect-assisted recombination pathways.…”

“…38,56−59 For instance, Jursěṅas et al have shown that the free-carrier lifetime in epitaxially grown GaN depends strongly on the concentration of defects (specifically, screw dislocations) in any given sample and can range from <10 ps to ∼1 ns. 58 Although kinetic traces like those presented in Figure 3c are difficult to correlate directly to carrier concentration, we find that the dynamics do not appear to depend on excitation fluence, which is consistent with defect-assisted recombination pathways. We do note, and describe in more detail below, that the faster feature becomes more prominent after photoinduced damage by excitation at shorter wavelengths.…”

Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications

“…While the time constant of the weak component t 2 cannot be determined with certainty (410 1 ns) and is suppressed using the UV-pass filter (showing that it is due to the decay of the yellow band), t eff scatters within 0.4-0.9 ns for the ensemble of the investigated samples. t eff is mainly controlled by the nonradiative lifetime, t NR [42], and unveils small differences in the densities of non-radiative centres between individual samples ( Fig. 4(a)).…”