2024
DOI: 10.1016/j.jechem.2024.01.050
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Rational construction of CuFe2O4@C/Cd0.9Zn0.1S S-scheme heterojunction photocatalyst for extraordinary photothermal-assisted photocatalytic H2 evolution

Dong Zhang,
Minghui Zhu,
Ran Qin
et al.
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Cited by 40 publications
(1 citation statement)
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“…49 The flat band ( E FB ) positions of 1–3 were determined to be −0.94, −0.85, and −0.61 V vs. SCE, and −0.70, −0.61, and −0.37 V vs. NHE, respectively. Generally, for most n-type semiconductors, the conduction band ( E CB ) position is more negative than E FB by 0.1 V. 50 Consequently, their E CB positions were estimated to be about −0.80, −0.71, and −0.47 V vs. NHE, respectively. Notably, this result was consistent with that obtained from UV–vis DRS and VB-XPS.…”
Section: Resultsmentioning
confidence: 99%
“…49 The flat band ( E FB ) positions of 1–3 were determined to be −0.94, −0.85, and −0.61 V vs. SCE, and −0.70, −0.61, and −0.37 V vs. NHE, respectively. Generally, for most n-type semiconductors, the conduction band ( E CB ) position is more negative than E FB by 0.1 V. 50 Consequently, their E CB positions were estimated to be about −0.80, −0.71, and −0.47 V vs. NHE, respectively. Notably, this result was consistent with that obtained from UV–vis DRS and VB-XPS.…”
Section: Resultsmentioning
confidence: 99%