The lack of low-temperature (<200
°C) and easy-to-handle
vapor deposition precursors for cadmium has been a limitation for
cadmium chalcogenide ALD. Here, the cadmium amidinate system is presented
as a scaffold for vapor deposition precursor design because the alkyl
groups can be altered to change the properties of the precursor. Thus,
the molecular structure affects the precursor stability at elevated
temperature, onset of volatility, and reactivity. Cadmium bis-N,N-diisopropylacetamidinate (1) was synthesized
and evaluated for its thermal stability, volatility, and reactivity–properties
relevant to ALD precursors. Compounds 2, cadmium bis-N,N-diisopropyltertertiarybutylamidinate, and 3, cadmium bis-N,N-diisopropylbutylamidinate,
are analogous to 1 and were synthesized by substituting
the alkyl group on the bridging carbon during amidinate synthesis.
All three compounds are volatile under reduced pressure, and thermal
stability studies showed 1 and 3 to be stable
at 100 °C in solution for days to weeks, while 2 decomposed at 100 °C within 24 h. Solution phase reactivity
studies show 1 to be reactive with thiols at room temperature
in a stoichiometric manner. No reactivity with either bis-silyl sulfides
or alkyl sulfides was observed up to 110 °C over more than 3
days. Overall, the cadmium amidinate compounds presented here show
potential as precursors in ALD/CVD processing, which can contribute
to research critical for semiconductor processing.