Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Chatterjee, Subhashri; Nemoto, Kazuhiro; Sun, Hong-Tao; Shirahata, Naoto

doi:10.1039/d4nh00038b

Nanoscale Horiz.

2024

DOI: 10.1039/d4nh00038b

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Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Subhashri Chatterjee,

Kazuhiro Nemoto,

Hong-Tao Sun

et al.

Abstract: This study demonstrates selective ligand engineering of InSb colloidal quantum dots (CQD) for enhancing the figure of merit of self-powered short-wave infrared (SWIR) photodiodes.

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Cited by 2 publications

References 69 publications

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From Synthesis to Application in Infrared Photodetectors: A Review of InSb Colloidal Quantum Dots

Xie,

Zhang,

Yang

et al. 2024

Laser & Photonics Reviews

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InSb colloid quantum dots (CQDs) are liquid “green” semiconductor materials. Their band gaps can be readily adjusted by controlling their particle size. Their excellent photoelectric properties and non‐toxic properties render them highly suitable for the fabrication of low‐cost infrared photodetectors and image sensors in industrial and consumer electronics applications. Despite the concept and preparation of InSb CQDs having been reported for decades, the performance of InSb CQDs‐based photodetectors still lags behind that of their toxic PbS CQDs‐based counterparts. This is mainly due to the immature synthesis process and the lack of sufficient device research. Fortunately, significant advances have been made in the synthesis of InSb CQDs and ligand exchange strategies over the past three years, resulting in notable enhancements in device performance. This review presents a summary of the recent advances in InSb CQDs and their applications in photodetectors. A particular focus is placed on the development of controllable synthesis routes for high‐quality InSb CQDs, which represents a significant challenge due to the high valence nature of InSb. Furthermore, the performance of these devices is discussed in detail, with a particular focus on ligand exchange and surface treatment strategies. Finally, a brief summary and outlook on InSb CQDs‐based photodetectors is presented.

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From Synthesis to Application in Infrared Photodetectors: A Review of InSb Colloidal Quantum Dots

Xie,

Zhang,

Yang

et al. 2024

Laser & Photonics Reviews

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Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors

Ghosh,

Yamada,

Nemoto

et al. 2024

Small Science

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Semiconductor p‐n homojunction is a requisite building block of operating transistors and diodes which make up the modern electronic circuits and optoelectronic applications. However, it has been so far limited to bulk form of single crystals such as silicon (Si) or gallium arsenide. Herein, a brand‐new method of constructing p‐n homojunction architectures that breaks through the limitation is presented. Colloidal inks of p‐type and n‐type Si quantum dots (QDs) are synthesized by thermal disproportionation of (HSiO1.5)n doped with boron or phosphorus, followed by surface ligand engineering. Analysis combining UV photoelectron spectroscopy, electron spin resonance, and current–voltage characteristics confirms that an orthogonal solvent trick makes clean interfaces between n‐type and p‐type SiQD layers without disruption on film formation. The forward and reverse current–voltage characteristics of the diode, along with various spectroscopic characterizations, demonstrate the formation of the first p‐n homojunction of SiQDs. The self‐powered photodiode provides a tunable response specific to the wavelength.

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Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots

Abstract: This study demonstrates selective ligand engineering of InSb colloidal quantum dots (CQD) for enhancing the figure of merit of self-powered short-wave infrared (SWIR) photodiodes.

Cited by 2 publications

References 69 publications

From Synthesis to Application in Infrared Photodetectors: A Review of InSb Colloidal Quantum Dots

From Synthesis to Application in Infrared Photodetectors: A Review of InSb Colloidal Quantum Dots

Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors

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