Rationally Designed Single‐Crystalline Nanowire Networks

Abstract

Rational bottom-up assembly of nanowire networks may be a way to successfully continue the miniaturization in the semiconductor industry. A generic method is developed that ensures InSb nanowires meet under the optimal angle for the formation of single-crystalline structures, which represents a promising platform for the future random access memories based on Majorana fermions.

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

“…The change in growth direction is not only relevant to suppress stacking defects, but also facilitates the integration with CMOS platforms where (100) wafers are typically used. Furthermore, in situ engineering of the droplet has opened many more perspectives, such as the growth of novel nanostructures, including nano-sheets [28][29][30][31] and nanocrosses [10,32]. Branched nanostructures have received considerable attention as building blocks for braiding of Majorana Fermions [33].…”

Nano-cross-junction effect on phonon transport in silicon nanowire cages

“…These make production of the phononic crystals by bottom-up synthesis and top-down fabrication extremely challenging. [17] Therefore, there is a strong need for a structure that can give rise to wave effects (interference, localization, and resonance) "locally" so that the periodicity is no longer and planar nanowire cross-junction architectures.[26] These works have shown the advantages of two-dimensional cross-junction over "bridge" junction.In this letter, based on the above bottom-up approach and planar nano-cross-junctions (NCJs), [26] we take a step further and propose a silicon-nanowire-cage (SiNWC) ( Fig. 1(c)) structure consisting of SiNWs ( Fig. 1(a)) and 3D-NCJs ( Fig.…”

“…[20] The advances include the growth of branched and hyperbranched nanowire structures [21,22], two-nanowireheterostructures-based nanocomposites [23,24], ZnO nanotetrapod bridging networks, [25] and planar nanowire cross-junction architectures. [26] These works have shown the advantages of two-dimensional cross-junction over "bridge" junction.…”

“…In this letter, based on the above bottom-up approach and planar nano-cross-junctions (NCJs), [26] we take a step further and propose a silicon-nanowire-cage (SiNWC) ( Fig. 1(c)) structure consisting of SiNWs ( Fig. 1(a)) and 3D-NCJs ( Fig.…”

Conductance Quantization at Zero Magnetic Field in InSb Nanowires

“…The chemical stability, atomic flatness, and high breakdown voltage, 21 together with the well established dry transfer mechanism 22 makes hBN an ideal dielectric for our nanowire devices. InSb nanowires grown by metal-organic vapor phase epitaxy 23,24 (1 -3µm long and 70 -90nm diameter) are transferred deterministically with a micro-manipulator 25 onto the hBN dielectric. Electrical contacts to the nanowire (evaporated Cr/Au (10/100 nm), 150 -400nm spacing) are defined by electron beam lithography.…”