Rationally Designing High‐Performance Versatile Organic Memristors through Molecule‐Mediated Ion Movements

Abstract

Organic memory have attracted tremendous attention for next‐generation electronic elements for the molecules’ strikingly ease of structural design. However, due to their hardly controllable and low ion transport, it is always essential and challenge to effectively control their random migration, pathway and duration. There are very few effective strategies, and specific platforms with a view to molecule with specific coordination groups‐regulating ions have been rarely reported. In this work, as a generalized rational design strategy, w e introduced the well‐known Tetracyanoquinodimethane (TCNQ) with multiple coordination groups and small plane structure into stable polymers framework to modulate the Ag migration and then achieved the high performance devices with ideal productivity, low operation voltage and power, stable switching cycles and state retention. Raman mapping demonstrated that the migrated Ag can specially coordinate with the embedded TCNQ molecules. Notably, w e can modulate the TCNQ molecule distribution inside the polymer framework and regulate the memristive behaviors through controlling the formed Ag conductive filaments (CFs) as demonstrated by the Raman mapping, in‐situ C‐AFM, XRD and depth‐profiling XPS. Thus the controllable molecule‐mediated Ag movements show its potential in rationally designing high performance devices and versatile functions and is enlightening in constructing memristors with molecule‐mediated ion movements.This article is protected by copyright. All rights reserved

Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers

“…The generated AgI x plays a significant role in obstructing conduction pathways and modulating interface charge transport. 36 The preceding step (depicted in Fig. 7g) eliminates the accumulated charges at the AgI x interface, causing the device to assume a low resistance state (LRS−).…”

“…26 Over time, ReRAMs achieved a remarkable ON/OFF ratio of 10, 9,27 a notably minimal set/reset voltage of 0.1 V, 28 and an extended retention duration exceeding 10 5 s. 29,30 Within this scope, memory devices based on perovskites have achieved multiple switching types, including unipolar, 31 bipolar, 32 and write once-read-many time (WORM) switching. 33 Particularly, a considerable number of perovskite memory devices exhibit bipolar switching characteristics, 26,34–36 wherein these devices can be turned ON under a forward bias and exclusively switched OFF through a reverse bias. However, the attributes of bipolar resistive switches within a cross-bar array configuration introduce a challenge in the form of cross-talk, as current can inadvertently traverse through the unselected devices.…”

Tea helps neuromorphic computing: flexible memristors from tea polyphenols

“…Concurrently, akin to the process of neuron repolarization, the thin Ag CFs tended to spontaneously rupture, influenced by the minimization of interfacial energy and the Thomson–Gibbs effect. 69,70 When the Ag CFs ruptured, the device no longer responded to continuously applied voltage pulses, and the artificial neurons entered into the refractory period. Following this refractory period, the neuron accumulated inputs once more, preparing for the subsequent spiking event.…”

Filamentary-based organic memristors for wearable neuromorphic computing systems

“…During the set process of the organic memristors, the injection and drift of metal ions occur across the entire area of the cell, leading to the random growth of the multiple filaments. To obtain the reproducible resistive switching behaviors in the organic memristors, several methods for confining the CF growth have been proposed [58][59][60][61][62][63][64].…”

“…Another approach to form the CFs in the localized regions involved guiding the ion drift into confined paths within the polymer switching medium [58,59,62,64]. A specific molecule, tetracyanoquinodimethane (TCNQ), known for its efficient coordination with Ag, was employed to define the Ag ion migration path and ensure reliable switching behaviors in the Ag/TCNQ-embedded polymer/ITO organic memristors (see figure 5(f)) [64]. The device showed the reliable switching cycles and the low device-to-device variation.…”