Rattler-seeded InSb nanoinclusions from metastable indium-filled In0.1Co4Sb12 skutterudites for high-performance thermoelectrics

Eilertsen, James; Rouvimov, Sergei; Subramanian, M. A.

doi:10.1016/j.actamat.2011.12.028

Cited by 46 publications

(31 citation statements)

References 30 publications

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“…In our previous work, we theorized that the combination of the open cage-like crystal structure, high dislocation and other defect concentrations, and minimized interstitial diffusion path lengths indeed enhance the diffusion kinetics and distribution of the precipitated interstitial -thus enabling the wide-spread dissemination of nano-sized phonon-scattering precipitates. 21 The technique, however, has not been fully optimized.…”

Section: Introductionmentioning

confidence: 98%

“…[15][16][17][18][19][20] Attrition-enhanced nanocomposite synthesis (AENS) is a novel technique used to produce nano-sized inclusions by precipitating interstitials from the filled void-sites of the skutterudite crystal structure. 21 The primary requisite of AENS is that the interstitial filler is metastable, as in the Ga x Co 4 Sb 12 and In x Co 4 Sb 12 compositions. [21][22][23][24] These compositions are then subjected to heavy attrition via mechanical milling where they are reduced to heavily deformed, fine-grained powders containing dislocations and other defects.…”

Section: Introductionmentioning

confidence: 99%

“…21 The primary requisite of AENS is that the interstitial filler is metastable, as in the Ga x Co 4 Sb 12 and In x Co 4 Sb 12 compositions. [21][22][23][24] These compositions are then subjected to heavy attrition via mechanical milling where they are reduced to heavily deformed, fine-grained powders containing dislocations and other defects. The sample powders are sintered, and heat-treated to precipitate the metastable fillers from the icosahedral void-sites.…”

Section: Introductionmentioning

confidence: 99%

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Attrition-enhanced nanocomposite synthesis of indium-filled, iron-substituted skutterudite antimonides for improved performance thermoelectrics

et al. 2013

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Nanostructuring has been the foremost approach to the manufacture of high-performance thermoelectric materials for nearly a decade. This study explores a novel nanostructuring technique, attrition-enhanced nanocomposite synthesis, in maximum indium-filled, ironsubstituted cobalt antimonide skutterudites. In 0.3 Fe 0.8 Co 3.2 Sb 12 was synthesized and subjected to varying degrees of mechanical attrition (via ball milling). These samples exhibited increased indium precipitation coincident with the duration of mechanical attrition. Indium readily diffused through the skutterudite crystal structure and rapidly precipitated forming 20-50 nmsized indium-rich inclusions during sintering.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Attrition-enhanced nanocomposite synthesis of indium-filled, iron-substituted skutterudite antimonides for improved performance thermoelectrics

et al. 2013

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“…Since the relatively high thermal conductivity depresses the TE performances of the binary skutterudites, which thus prevents their commercial application, tremendous efforts have been made to reduce the thermal conductivity. Several phonon scattering mechanisms [1][2][3][4][5] have been proposed, among which introducing loosely bonded atoms into the intrinsic voids of the unit cell 6,7 may be the most important. Extensive theoretical and experimental studies show that local phonon scattering, induced by the filling atoms, can remarkably reduce the thermal conductivity, while the electric transport features are basically maintained.…”

Section: Introductionmentioning

confidence: 99%

Ba-Filling Effect on the Uniaxial Tensile and Compressive Mechanical Behavior of Crystalline CoSb3: A Molecular Dynamics Study

Yang

Chen

et al. 2014

Journal of Elec Materi

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Filled skutterudites, which possess application potential, are believed to be a class of novel thermoelectric materials. The contribution of atomic filling to the significant decrease of phonon conductivity is investigated extensively in the literature. However, the filling effect on the fundamental mechanical behavior is not so far very clear. In the present study, molecular dynamics simulations have been performed to investigate the effect of Ba-filling on the uniaxial tensile and compressive mechanical properties of crystalline CoSb 3 with a multibody interatomic potential. First, we constructed the fully Bafilled CoSb 3 model according to the ideal lattice structure. For comparison, pure binary CoSb 3 was also modeled. Then, the simulation models were relaxed to reach more favorable configurations. Thereafter, the uniaxial tension and compression were carried out by strain-controlling until failure at room temperature. Stress-strain curves were obtained during the whole deformation process. The atomic rearrangements and failure patterns were also examined. The comparison of these mechanical responses between the filled and unfilled CoSb 3 was made and analyzed. The results are expected to be helpful for the application of high-performance skutterudites.

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“…21,[25][26][27][28][29] Other emerging materials have been developed by nanostructurization. [30][31][32][33] As a classic method to modify the electrical transport, elemental doping still plays an important role in improving the thermoelectric properties. [34][35][36][37] Here, the process of combining of nanostructurization and elemental doping has been employed.…”

Section: Introductionmentioning

confidence: 99%

Improvement of Thermoelectric Properties Via Combination of Nanostructurization and Elemental Doping

Zhao

Guo

Shu

et al. 2014

JOM

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Since the nanostructure was introduced to modify thermoelectric properties in 1993, many efforts have been devoted to fabricate nanostructures and investigate the electrical and thermal transports in nanostructured materials. Compared with low-dimensional materials, nanocomposites not only exhibit nanofeatures but also can be fabricated in large quantities and compatible with practical thermoelectric devices in scale and shape. This article reviews the background of nanocomposites, then the Mg 2 (Si 0.4 Sn 0.6 )Bi x solid solutions. High-manganese silicides with MnSi (HMS-MnSi), and In 4Àx Gd x Se 3 compounds are selected as examples to illustrate the combination effect of nanostructure and dopants on thermoelectric properties. In situ nanostructures successfully formed during the rapid cooling and spark-plasma sintering processing and elemental doping were achieved via melting processing. Electrical conductivities were enhanced as a result of the increased carrier concentration or carrier mobility by elemental doping. Meanwhile, thermal conductivities decreased as a result of the strong phonon scattering intensified by nanostructures. The ZTs for the specimens with optimal doping ratio were enhanced in these three types of thermoelectric materials.

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Rattler-seeded InSb nanoinclusions from metastable indium-filled In0.1Co4Sb12 skutterudites for high-performance thermoelectrics

Cited by 46 publications

References 30 publications

Attrition-enhanced nanocomposite synthesis of indium-filled, iron-substituted skutterudite antimonides for improved performance thermoelectrics

Attrition-enhanced nanocomposite synthesis of indium-filled, iron-substituted skutterudite antimonides for improved performance thermoelectrics

Ba-Filling Effect on the Uniaxial Tensile and Compressive Mechanical Behavior of Crystalline CoSb3: A Molecular Dynamics Study

Improvement of Thermoelectric Properties Via Combination of Nanostructurization and Elemental Doping

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