High-temperature piezoresponse force microscopy Appl. Phys. Lett. 99, 173103 (2011) Comparison of structural and electric properties of PbZr0.2Ti0.8O3 and CoFe2O4/PbZr0.2Ti0.8O3 films on (100)LaAlO3 J. Appl. Phys. 110, 064115 (2011) Influence of Mn doping on domain wall motion in Pb(Zr0.52Ti0.48)O3 films J. Appl. Phys. 109, 064105 (2011) Critical thickness for extrinsic contributions to the dielectric and piezoelectric response in lead zirconate titanate ultrathin films J. Appl. Phys. 109, 014115 (2011) Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon Appl. Phys. Lett. 98, 012903 (2011) Additional information on J. Appl. Phys. In contrast to usual assumptions, it is shown that even when ferroelastic domain walls are inactive or absent, the motion of ferroelectrically active interfaces in ferroelectric materials contributes, at subcoercive electric fields, not only to the polarization but also to the strain. Specifically, in polycrystalline samples, strain coupling between adjacent grains, or mediated through the substrate in thin films, influences both the dielectric and piezoelectric response. The model developed explains the unexpected observation of piezoelectric nonlinearity in films even in cases in which the domain variants' projections are equivalent along the direction of the external driving field.