RBS and SIMS study of the simultaneous phase growth of iridium silicides formed by RTA in vacuum

Almendra, A.; Serrano, J. J.; Kling, A.; Rodrı́guez, T.; Blanco, J.M.; Silva, M.F. da; Sanz‐Maudes, J.; Aguilar, Miguel; Soares, J.C.

doi:10.1016/s0168-583x(97)00793-3

Cited by 4 publications

(3 citation statements)

References 3 publications

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“…19 The Rutherford backscattering spectra ͑RBS͒ 20,21 show that IrSi and IrSi 1.75 are the only compounds formed for annealing temperatures up to 675°C and that both phases grow simultaneously and can coexist with unreacted Ir metal. At low temperature, the simultaneous presence of unreacted Ir and IrSi is suggested.…”

Section: Discussionmentioning

confidence: 99%

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

Sanz‐Maudes

Jiménez-Leube

Clément

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The silicidation of iridium layers by rapid thermal annealing as a function of temperature and processing time is studied for both vacuum and argon atmosphere. The electrical properties of the resulting IrSi/n-type Si diodes are determined and related to the interface properties. I -V -T spectroscopy allows us to detect interface modifications even in the case where other diagnostics cannot be employed. Rapid thermal annealing ͑RTA͒ vacuum annealed diodes show inhomogeneous potential distribution at the metal-semiconductor interface. This is related with the coexistence of different metallurgical phases ͑Ir, IrSi, and IrSi 1.75 ) at the interface as a consequence of the thermal treatments. The estimated value for the Schottky barrier height of the IrSi 1.75 is 0.7 eV. In contrast, RTA argon annealed diodes show more reproducible characteristics. The main effect of the reaction atmosphere is to slow down the reaction rate as well as to inhibit the IrSi 1.75 formation. This could be related with the residual oxygen contents of the reaction atmosphere. RTA argon annealing at 500°C during 5 min is a reliable procedure for homogeneous IrSi infrared Schottky barrier detectors fabrication that can be employed in an industrial environment.

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Section: Discussionmentioning

confidence: 99%

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

Sanz‐Maudes

Jiménez-Leube

Clément

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Iridium films 160 nm thick were deposited on Si substrates by electron-beam evaporation. Further details on the deposition process are available elsewhere [5]. After deposition, the specimens were annealed in vacuum using a rapid-thermal-processing (RTP) system.…”

Section: Methodsmentioning

confidence: 99%

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)

Almendra

Rodrı́guez

et al. 2002

J. Phys.: Condens. Matter

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Si L 2,3 soft-x-ray emission spectra of IrSi, Ir 3 Si 5 and IrSi 3 compounds have been taken and the valence band densities of states associated with them have been analysed as functions of the concentration of Si atoms, the coordination number of Si-Ir in the iridium silicide compounds and the average distances of the Si-Si bonds in those compounds. The role of silicon 3s3d states in the bonding of the different iridium silicides is discussed. All the spectra show two regions, one associated with the low-energy Si 3s states and another one associated with high-energy Si 3s3d states. The effects of the interaction between the Si and Ir atoms in the silicides are: (a) the distribution of silicon states, even those associated with the least energetic s electrons, are modified, suggesting that the s electrons play a role in the formation of the iridium silicides; (b) the energy bandwidth corresponding to the Si 3s3d states increases up to 2.5 eV as the number of Si atoms that interact with the Ir atoms increases; and (c) there is a significant contribution from the d electrons, the fraction of the states associated with them being at least 20% of the total of states associated with the 3s3d states.

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“…This shift in binding energy is attributed to the growth of another silicon-rich silicide phase at IrSi/ Si interface when the formation of the IrSi layer is completed. Almendra et al 22 showed that the three phases can coexist for a range of iridium thickness around several tens of nanometers. This point constitutes a considerable difference with platinum silicide for which the difference between the activation energies associated to Pt 2 Si and PtSi is too large to observe this scenario.…”

Section: -2mentioning

confidence: 99%

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

Larrieu¹,

Dubois²,

Wallart³

et al. 2007

Journal of Applied Physics

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A detailed study of the formation of iridium silicide obtained by ultrahigh vacuum annealing and atmospheric rapid thermal processing is proposed using x-ray photoelectron spectroscopy ͑XPS͒, transmission electron microscopy ͑TEM͒, and electrical characterizations. Using XPS analysis, the stoichiometry of each silicide phase ͑IrSi, IrSi 1.6 ͒ is identified. A model based on the variation of the measured intensity of the Ir 4f spectra is used to obtain the kinetic coefficients of reaction of Ir silicidation ͑E A = 2.48 eV, D 0 =9 cm 2 /s͒. TEM cross sections indicate that the roughness of the silicide/silicon interface increases with temperature. Lastly, electrical characteristics are used to identify the optimum annealing temperature to obtain an iridium silicide contact with the lowest Schottky barrier height to holes.

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RBS and SIMS study of the simultaneous phase growth of iridium silicides formed by RTA in vacuum

Cited by 4 publications

References 3 publications

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

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RBS and SIMS study of the simultaneous phase growth of iridium silicides formed by RTA in vacuum

Cited by 4 publications

References 3 publications

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir3Si5and IrSi3)

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

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The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)