RBS-C and ellipsometric investigations of radiation damage in hot-implanted GaAs layers

Kulik, M.; Żuk, J.; Droździel, A.; Pyszniak, K.; Komarov, F. F.; Rzodkiewicz, W.

doi:10.1016/j.mseb.2011.01.001

Cited by 6 publications

(2 citation statements)

References 10 publications

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“…The correlations between refractive index and radiation damage in the implanted layers have been investigated [6]. SE and RBS/C studies of the inuence of implantation temperature on the dielectric function were performed on hot-implanted GaAs [7]. It was conrmed that the optical models used in the SE interpretation works well for the subsurface implanted layers.…”

Section: Gaas Implanted With Armentioning

confidence: 99%

Dielectric Function of Native Oxide on Ion-Implanted GaAs

et al. 2013

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The main aim of the reported investigations is the inuence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with Ne + , Al + , Ar + , or In + ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a uence of 1 × 10 16 cm −2 at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with dierent ions have been obtained by variable angle spectroscopic ellipsometer in the 250900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.

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Section: Gaas Implanted With Armentioning

confidence: 99%

Dielectric Function of Native Oxide on Ion-Implanted GaAs

et al. 2013

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“…The study of GaAs implanted with indium have recently reported in [1][2][3][4][5] and also an increasing interest has been pointed out in the formation of InAs/GaAs quantum dots [6]. The process of diffusion of indium in implanted GaAs were presented inter alia in [7].…”

Section: Introductionmentioning

confidence: 99%

Influence of ion beam on optical properties of GaAs: Calculation using the fractional‐derivative‐spectrum method

Kulik

Rzodkiewicz

Droździel

et al. 2011

Phys. Status Solidi (c)

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Semiconductor GaAs (100) was implanted with In+ at a room temperature. Fluences of implanted ions were from 1x 1012 cm‐2 to 3x1013 cm‐2 and the energy was equal to 85 keV. The detectability of the indium content in near surface layer of GaAs has been studied with the use of the secondary ion mass spectrometry (SIMS). The depths distribution of a indium concentration measured by SIMS method ware compared with depth profiles calculated with the help of SATVAL code. It was noticed that calculated profiles are in a good agreement with the measured values. Additionally, the concentration of indium in the near surface layer increased with growing of the implantation fluence and a maximum of these profiles shift in the side of ions exposed surfaces of GaAs. This effect can be explained by self‐diffusion process of target atoms and indium during the implantation. The fractional derivative spectrum (FDS) model in connection with spectroscopic ellipsometry ES was used for particular optical analyses of implanted GaAs substrates. The FDS is especially promising technique when the limitations of the standard treatment by Lorentz shape line analysis occur and it is very helpful to extract basic information on relevant physical quantities from the detected εE2(E) spectra determined by spectroscopic ellipsometry. In particular, using spectroscopic ellipsometry and FDS, the critical points E1 and E1+Δ observed in the εE2(E) spectra in the implanted substrates have been investigated. The differences in complex refractive index and dielectric function (ε=ε1+iε2) between GaAs substrate before and implantation were observed. Moreover, the several nanometres thick oxide layer on GaAs surface was detected. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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