RbSnX₃ (X = Cl, Br, I): promising lead-free metal halide perovskites for photovoltaics and optoelectronics

Abstract

This work summarizes that RbSnX3 (X = Cl, Br, I) exhibits remarkable ductility and absorption in the ultraviolet (UV) region of the electromagnetic spectrum compared to those of CsBX3 (B = Ge, Sn, Pb; X = Cl, Br, I) metal halide perovskites.

Understanding the role of rare-earth metal doping on the electronic structure and optical characteristics of ZnO

“…71,72 It provides a comprehensive understanding of the mechanical and dynamical properties of crystalline materials. 71,72 Going ahead, the elastic constants for the considered RE-doped ZnO samples have been obtained by linearly fitting the computed stress–strain relation using Hook's law. 71–76 Table 2 summarizes the estimated elastic constants of RE-doped ZnO.…”

“…71,72 Going ahead, the elastic constants for the considered RE-doped ZnO samples have been obtained by linearly fitting the computed stress–strain relation using Hook's law. 71–76 Table 2 summarizes the estimated elastic constants of RE-doped ZnO. C 11 , C 12 , C 13 , C 33 , C 44 , and C 66 are the six independent elastic constants in the hexagonal crystal structure.…”

“…72 Moreover, G is a measure of plastic deformation, or shape change, of material; a lower value of G indicates that the material is less rigid and low resistant to shape change. 72 Even though B and G of ZnO samples have been lowered due to RE doping, all samples still exhibit excellent resistance to volume and plastic deformation (Table 3). The B / G ratio, also known as Pugh's ratio, is used to determine the failure mechanism of a material.…”

“…72 If the Pugh's ratio is more than 1.75 and the v is greater than 0.26, then the material is ductile; otherwise, it is brittle. 72 According to the criteria, all the RE-doped ZnO samples examined in this study are determined to be extremely ductile. It is worth mentioning that materials with greater ductility are more suitable for optoelectronic devices.…”

“…It is worth mentioning that materials with greater ductility are more suitable for optoelectronic devices. 72 M = C 11 + C 12 + 2 C 33 − 4 C 13 C 2 = ( C 11 + C 12 ) C 33 − 2 C 13 2 …”