RD50-MPW3: a fully monolithic digital CMOS sensor for future tracking detectors

Sieberer, Patrick; Zhang, C.; Bergauer, T.; Casanova, R.; Irmler, C.; Karim, N.; Cos, Jose Mazorra de; Pilsl, B.; Figueras, E. Vilella

doi:10.1088/1748-0221/18/02/c02061

Cited by 8 publications

(4 citation statements)

References 7 publications

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“…RD50 has a common project called RD50 Multi Project Wafer (RD50 MPW) of Depleted Monolithic Active Pixel Sensors (DMAPS). There has been three designs, RD50-MPW1, RD50-MPW2 and RD50-MPW3 [30][31][32]. They show good results under irradiations with neutrons up to 2 × 10 15 n eq /cm 2 [33].…”

Section: Monolithic Detectorsmentioning

confidence: 99%

Silicon Detectors for Future Experiments – RD50 Status Report

Baselga

2024

Proceedings of the 32nd International Workshop on Vertex Detectors — PoS(VERTEX2023)

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In 2001 the Large Hadron Collider (LHC) and High Luminosity Large Hadron Collider (HL-LHC) were facing the challenging construction of experiments that have to withstand radiation levels never dealt with before in a particle detector. The innermost tracking layers, closest to the beam, are expected to reach an instantaneous luminosity of 7.5 × 10 34 cm −2 s −1 , being the result of 200 simultaneous proton-proton interactions per bunch crossing, and fluence levels of 2×10 16 n eq /cm 2 . The LHC experiments' upgrades utilize silicon for the tracking detection layers, which have to withstand a huge amount of radiation at the end of the experiment lifetime without losing the detectors' performance. Therefore, in 2001, there was a need to study the precise damage that those detectors were going to receive, as well as to simulate, understand and mitigate the radiation effects in the silicon detectors. RD50 is a CERN-based collaboration that started in 2002. The collaboration is dedicated to study radiation-hard semiconductor devices for very high luminosity colliders. The collaboration is finishing its activity by the end of 2023 with 65 institutes and more than 400 members, leaving more than 20 years of radiation damage studies and leading the development of new technologies for radiation-hard semiconductor devices, as well as detector technologies and 4D detectors. The collaboration is organized into four research areas: material characterisation, detector characterisation, new detectors and full detector systems. During 20 years, different silicon detector layouts and materials have been extensively studied before and after irradiation. The trap centres created inside the silicon have been parametrized, which provided valuable information for the implementation of radiation effects for simulation software tools. There have been strategies to mitigate the radiation damage, as well as new measurement techniques to study the electric field inside the sensor bulk. Silicon detector concepts, including monolithic, 3D and LGAD detectors, have been thoroughly investigated for use inside the HL-LHC. As a result, 3D detectors were installed inside the ATLAS IBL layer, and LGADs are being introduced in the timing detectors of the CMS and ATLAS Phase-II upgrades. This text aims to summarise more than 20 years of RD50 results as well as some current research.

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Section: Monolithic Detectorsmentioning

confidence: 99%

Silicon Detectors for Future Experiments – RD50 Status Report

Baselga

2024

Proceedings of the 32nd International Workshop on Vertex Detectors — PoS(VERTEX2023)

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“…However, to meet all these requirements in a single device, further R&D is needed to advance the performance of the sensors. The series of RD50-MPW chips are generic R&D prototypes, in the 150 nm High Voltage CMOS (HV-CMOS) technology process from LFoundry S.r.l, aimed at further developing depleted monolithic CMOS sensors while tackling the challenges of especially high pixel granularity (50 μm × 50 μm), fast timing resolution (0.1 ns) and excellent radiation tolerance (10 16 n eq /cm 2 ). An overview of the main results achieved so far within this programme is available in [1].…”

Section: Introductionmentioning

confidence: 99%

“…It was fabricated on standard value, 1.9 kΩ•cm and 3 kΩ•cm resistivity p-type substrate. A detailed description of the design of RD50-MPW3 can be found in [2]. This paper presents the latest evaluation results of RD50-MPW3 in 1.9 kΩ•cm, including laboratory measurements in section 2 and test beam measurements in section 3.…”

Section: Introductionmentioning

confidence: 99%

RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance

Zhang,

Pilsl,

Powell

et al. 2024

J. Inst.

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A series of monolithic High Voltage CMOS (HV-CMOS) pixel sensor prototypes have been developed by the CERN-RD50 CMOS working group for potential use in future high luminosity experiments. The aim is to further improve the performance of HV-CMOS sensors, especially in terms of pixel granularity, timing resolution and radiation tolerance. The evaluation of one of this series, RD50-MPW3, is presented in this contribution, including laboratory and test beam measurements. The design of the latest prototype, RD50-MPW4, which resolves issues found in RD50-MPW3 and implements further improvements, is described.

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“…Both types of sensors are undergoing significant development and are being used in different applications [4]. Monolithic sensors [5,6] are used in applications where mass reduction and a low material budget are the most limiting used in applications where mass reduction and a low material budget are the most limiting requirements. An example of their use and performance can be found in the STAR [7] experiment or in the work published by the RD50 collaboration [8].…”

Section: Introductionmentioning

confidence: 99%

Advanced System-on-Chip Field-Programmable-Gate-Array-Powered Data Acquisition System for Pixel Detectors

Jiménez-Sánchez,

Blanco-Carmona,

Hinojo-Montero

et al. 2023

Sensors

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Particle detector systems require data acquisition systems (DAQs) as their back-end. This paper presents a new edge-computing DAQ that is capable of handling multiple pixel detectors simultaneously and was designed for particle-tracking experiments. The system was designed for the ROC4SENS readout chip, but its control logic can be adapted for other pixel detectors. The DAQ was based on a system-on-chip FPGA (SoC FPGA), which includes an embedded microprocessor running a fully functional Linux system. An application using a client–server architecture was developed to facilitate remote control and data visualization. The comprehensive DAQ is very compact, thus reducing the typical hardware load in particle tracking experiments, especially during the obligatory characterization of particle telescopes.

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RD50-MPW3: a fully monolithic digital CMOS sensor for future tracking detectors

Cited by 8 publications

References 7 publications

Silicon Detectors for Future Experiments – RD50 Status Report

Silicon Detectors for Future Experiments – RD50 Status Report

RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance

Advanced System-on-Chip Field-Programmable-Gate-Array-Powered Data Acquisition System for Pixel Detectors

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