Reaction between SiC and W, Mo, and Ta at elevated temperatures

Geib, K.M.; Wilson, Catrina E.; Long, Robert G.; Wilmsen, C. W.

doi:10.1063/1.346457

Cited by 80 publications

(36 citation statements)

References 23 publications

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“…In line with the explanation given by Geib et al [20], the reaction between W and SiC on our as-deposited samples might be due to the Ar plasma cleaning before deposition. The presence of a silicide and a carbide on the as-deposited is due to the favourable kinetic and thermodynamic factors at the interface.…”

Section: Sem Resultssupporting

confidence: 69%

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The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

Thabethe

Hlatshwayo

Njoroge

et al. 2016

Vacuum

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Tungsten (W) film was deposited on bulk single crystalline 6H-SiC substrate and annealed in H 2 ambient at temperatures of 700 ºC, 800 ºC and 1000 ºC for 1 hour. The resulting solidstate reactions, phase composition and surface morphology were investigated by Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM) analysis techniques. These results are compared with the vacuum annealed results reported in our earlier work. As-deposited RBS results indicated the presence of W and O 2 in the deposited thin film, the GIXRD showed the presence of W, The SEM micrographs of the as-deposited samples indicated the W thin film had a uniform surface with small grains. Annealing at 800 ºC led to the agglomeration of W grains into clusters making the surface rough.

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Section: Sem Resultssupporting

confidence: 69%

“…The reaction between W and SiC during deposition was also reported in earlier studies done by Geib et al [20], in which they sputter deposited W on SiC. Their resulting Auger profiles for the as-deposited sample showed that a reaction between W and SiC took place to form WSi 2 and WC.…”

Section: Sem Resultsmentioning

confidence: 51%

The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

Thabethe

Hlatshwayo

Njoroge

et al. 2016

Vacuum

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“…This preferential etching of silicon from SiC surface leading to the formation of a carbon-rich surface layer by a RF plasma process by low energy (0.5 to 5 keV) argon ion bombardment has been observed to occur before in. [34][35][36] The deposition of Zr creates an intermixing effect between Zr and C which resulted in the formation of ZrC on the as-deposited sample as observed from XRD results. Transition metals such as W, Mo and Ta have been observed form a thin intermixed layer of carbide and silicide aer deposition at room temperature.…”

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confidence: 89%

Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

et al. 2016

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Zr films (130 nm) were deposited on a 6H-SiC substrate at room temperature by sputter deposition. The interface solid-state reactions due to high vacuum thermal annealing between 600 C and 850 C for 30 min were investigated by Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD).The surface morphology evolution due to thermal annealing was investigated and quantified using atomic force microscopy (AFM) and secondary electron microscopy (SEM). RBS analysis indicated that the as-deposited sample had a thin intermixed region consisting of ZrC and Zr 2 Si. The phases formed at each temperature were identified by XRD analysis. At temperatures of 700 C and above, Zr reacted with the SiC substrate and formed a mixed layer of Zr carbide (ZrC) and Zr silicides (Zr 2 Si, ZrSi 2 and Zr 5 Si 3 ).The surface morphology from SEM analysis revealed a homogeneous Zr surface which varied with annealing temperature with the appearance of clusters on the Zr surface. AFM analysis revealed that the R RMS surface roughness decreased from the as-deposited value of 1.65 nm after annealing at 700 C and then increased at higher temperatures due to coalescing of the surface granules in the Zr layer. It has also been demonstrated that the obtained experimental results between Zr and SiC have a good correlation with the ternary EHF model with regards to initial phases formed in the interface.

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“…W films with thickness less than 100 nm resulted in the formation of WSi 2 [27]. In our case we deposited W thin film of 65 nm on SiC which resulted in the formation of WSi 2 silicide.…”

Section: Scanning Electron Microscopy (Sem)mentioning

confidence: 99%

Interfacial reactions and surface analysis of W thin film on 6H-SiC

Thabethe

Hlatshwayo

Njoroge

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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Tungsten (W) thin film was deposited on bulk single crystalline 6H-SiC substrate and annealed in vacuum at temperatures ranging from 700 to 1000 ºC for 1 hour. The resulting solid-state reactions, phase composition and surface morphology were investigated by Rutherford backscattering spectroscopy (RBS), grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM). XRD was used to identify the phases present and to confirm the RBS results. The RBS spectra were simulated using the RUMP software in order to obtain the deposited layer thickness, composition of reaction zone and detect phase formation at the interface. RBS results showed that interaction between W and SiC started at 850 °C. The XRD analysis showed that WC and CW 3 were the initial phases formed at 700 ºC and 800 °C. The concentration of the phases was however, too low to be detected by RBS analysis. At temperatures of 900 °C and 1000 °C, W reacted with the SiC substrate and formed a mixed layer containing a silicide phase (WSi 2 ) and a carbide phase (W 2 C). The SEM images of the as-deposited samples showed that the W thin film had a uniform surface with small grains. The W layer became heterogeneous during annealing at higher temperatures as the W granules agglomerated into island clusters at temperatures of 800 °C and higher.

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Reaction between SiC and W, Mo, and Ta at elevated temperatures

Cited by 80 publications

References 23 publications

The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6HSiC

Surface and interface reaction analysis of Zr films deposited on 6H-SiC after thermal annealing

Interfacial reactions and surface analysis of W thin film on 6H-SiC

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