BaTiO 3 -based dielectrics containing the selective additive combinations from Pb-free glasses and fluoride compounds such as AlF 3 , BaF 2 , CaF 2 , LiF and ZnF 2 were studied mainly for a potential N 2 -fireable embedded capacitor in printed circuit board with Cu metallization. The physical and dielectric properties, such as dielectric constant (k), loss tangent (tanδ) and T c , strongly depended on the choice of additive combination. A bismuth borosilicate glass was most promising in terms of the degree of densification and dielectric constant. The samples containing LiF and ZnF 2 and sintered at 950°C looked most beneficial in that these additives produced high k of >1,200 and low tanδ of < 0.022 at room temperature regardless of sintering atmosphere. As an example, the 95BaTiO 3 -2LiF-3(Bi borosilicate) sample exhibited k~1,340 and tanδ0.022 at room temperature when fired at 950°C in N 2 .