Reaction Dynamics of Activated Hydrophobic Silicon for Low-Temperature Wafer Bonding

Breninford, Michael; Colinge, Cindy; Holl, Susan; Hobart, Karl D.; Kub, Fritz J.

doi:10.1149/1.3080639

Cited by 3 publications

(4 citation statements)

References 10 publications

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“…Shi et al and Kub et al [119][120][121][122][123] systematically studied the effect of UV irradiation on Si/Si wafer bonding. The effect of UV irradiation time on the RMS of the Si surface and on bonding strength was investigated, as shown in figure 18.…”

Section: Ultraviolet-activated Bondingmentioning

confidence: 99%

A review: wafer bonding of Si-based semiconductors

Chen

2020

J. Phys. D: Appl. Phys.

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Wafer bonding techniques, which are very different from epitaxial growth techniques, can be used not only for the fabrication of micro-electromechanical systems (MEMS), silicon on insulator (SOI), and Si-based device integration, but have recently been applied to the achievement of high-quality homojunctions and heterojunctions in the photoelectric field. That is, carrier transport at the interface of the wafer-bonded junction should be unimpeded and carrier recombination at the bonded interface should be restrained. For Si/Si wafer bonding, although a high bonding strength and a bubble-free bonded interface are needed for the fabrication of the MEMS and SOI, a perfect Si/Si bonded interface which is expected to be bubble-free, oxide-layer-free, and dislocation-free is needed for the achievement of high-performance photoelectric devices, such as Ge/Si single-photon avalanche photodiodes. On the other hand, for Ge/Si heterogeneous hybrid integration (high lattice mismatch), threading dislocations (TDs) in the Ge film can be eliminated by low-temperature heterogeneous wafer bonding, due to the lower diffusion rate of misfit dislocations (MDs) at the Ge/Si bonded interface. This is very different from epitaxial growth, in which high-density TDs form in the integrated Ge layer due to the threading of MDs at high-temperature. In this paper, we review the wafer bonding of Si-based semiconductors based on different bonding methods. The advantages and disadvantages of different bonding methods are pointed out for comparison. We focus on the illustration of the fabrication of Si/Si and Ge/Si wafer pairs with TD-free, bubble-free, and oxide-layer-free bonded interfaces. Finally, the outlook for the development of Si/Si and Ge/Si wafer bonding and devices based on the wafer bonding technique is considered. We trust that this work may provide guidance for the low-temperature heterogeneous hybrid integration of different group materials with ultrahigh lattice mismatch, such as GeSn on Si and III-V materials on Si.

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Section: Ultraviolet-activated Bondingmentioning

confidence: 99%

A review: wafer bonding of Si-based semiconductors

Chen

2020

J. Phys. D: Appl. Phys.

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“…Bonding mechanism discussion.-According to published articles, UV/O 3 irradiation presents two crucial impacts on the bonding surfaces: (1) removing organic contaminants [17][18][19][20][21] and (2) producing hydroxyl on surfaces (see Reactions 3 and 4). 22 The 172-nm wavelength VUV used in the experiment has been reported that can bring about 200% photo efficiency for oxygen radicals and ozone cleaning production in air.…”

Section: Resultsmentioning

confidence: 99%

Room-Temperature Direct Heterogeneous Bonding of Glass and Polystyrene Substrates

Wang

et al. 2018

J. Electrochem. Soc.

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Organic-inorganic hybrid structures enable new opportunities for ubiquitous sensors. Bonding of organic and inorganic materials is highly desirable but challenging. Polystyrene and glass are two of typical substrate materials for micro/nanofluidic devices. However, they are very difficult to be combined due to their extremely large thermal expansion mismatches. To avoid thermal stress generated at elevated temperatures, we developed a room-temperature direct bonding process between polystyrene and glass substrates using vacuum ultraviolet-ozone (VUV/O 3 ) surface irradiation without employing heat. After storage at room temperature (∼25 • C) for 24 h, the bonding strengths were measured to be >2 MPa, representing a robust interfacial bonding. The bonded polystyrene-glass pair exhibited excellent optical transparency due to nearly no deterioration at the bonding interface. The details of VUV/O 3 treated surfaces and bonding interfaces were characterized and a bonding model was demonstrated to elucidate the glass-polystyrene bonding mechanism.

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“…(1) removing organic contaminants and (2) creating oxide layers on surfaces. [13][14][15][16] For the short 172-nm wavelength VUV, there is essentially 200% photo efficiency for oxygen radicals and ozone cleaning production in air. 12 Therefore, VUV cleaning is much faster than mercury UV lamp cleaning (coexistence of longer wavelengths of 254 nm and 185 nm).…”

Section: Resultsmentioning

confidence: 99%

“…In particular, UV/O 3 irradiation may benefit direct bonding without the bombardment effect. [13][14][15] Recently, a shorter-wavelength vacuum ultraviolet (VUV) irradiation has been found to clean the surface more effectively and thereby applied for the homogenous bonding of Au/Au as well as the heterogeneous bonding between polyether ether ketone (PEEK) and Pt. 16,17 Nevertheless, little attention has been dedicated on direct homo/heterogeneous bonding of silicon and glass using VUV irradiation.…”

mentioning

confidence: 99%

Direct Homo/Heterogeneous Bonding of Silicon and Glass Using Vacuum Ultraviolet Irradiation in Air

Wang

et al. 2018

J. Electrochem. Soc.

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We develop a cost-effective vacuum ultraviolet (VUV) irradiation in air combined with an in situ bonding process. The whole bonding process does not require high vacuum environments. Strong bonding strengths for Si/Si, Si/glass, and glass/glass pairs were achieved with the assistance of annealing at 200 • C. There was no crack or defect at the bonding interfaces. The excellent optical transparency of the bonded glass/glass pairs was demonstrated in the UV-visible range. On the basis of the surface and bonding interface characterizations, the low-temperature bonding mechanism was investigated and discussed. Similar to the plasma activated bonding, the internal water stress corrosion plays a crucial role in the mechanical evolution of bonding interface between the VUV irradiated surfaces during annealing. This facile bonding method offers great potential for silicon-and glass-based homo/heterogeneous integrations in microelectronics, optoelectronics and microfluidics.

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Reaction Dynamics of Activated Hydrophobic Silicon for Low-Temperature Wafer Bonding

Cited by 3 publications

References 10 publications

A review: wafer bonding of Si-based semiconductors

A review: wafer bonding of Si-based semiconductors

Room-Temperature Direct Heterogeneous Bonding of Glass and Polystyrene Substrates

Direct Homo/Heterogeneous Bonding of Silicon and Glass Using Vacuum Ultraviolet Irradiation in Air

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