Reaction Engineering of Through-Chip Via Filling for Wafer-Level 3D Packaging

Barkey, Dale P.; Callahan, John J.; Keigler, Arthur; Liu, Z.; Ruff, Al; Trezza, J. A.; Wu, Bang-Hao

doi:10.1109/ectc.2007.373864

Cited by 4 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, it is necessary to develop a new Cu-via electrodeposition mechanism and chemistries due to its high aspect ratio and depth. For Cu electrodeposition in the TSV, the depth of the via is comparable to the thickness of a diffusion boundary layer [9]. It is very challenging and important to improve mass transport and the concentration gradient of reactants within the via to avoid via void or seam [8,10].…”

Section: Introductionmentioning

confidence: 99%

Copper electrodeposition in a through-silicon via evaluated by rotating disc electrode techniques

Tsai¹,

Huang²

2010

J. Micromech. Microeng.

View full text Add to dashboard Cite

Via filling is a critical process for metallization of a through-silicon via (TSV) in a 3D MEMS device. This study uses a rotating disc electrode (RDE) at 1000 rpm, 100 rpm and 10 rpm to simulate the mass-transfer environment of metallization on the wafer surface, at the bottom of shallow vias and the deep vias, respectively. RDE techniques display the difference of suppression action among three rotation speeds clearly. The calculated filling power is higher over a wide surface current density using the plating bath of 50 g L −1 Cu 2+ than that of 25 or 75 g L −1 Cu 2+ . TSV filling in a wafer-segment scale, with 15 μm via diameter and 150 μm via depth, verifies the performance predicted by the RDE techniques.

show abstract

Section: Introductionmentioning

confidence: 99%

Copper electrodeposition in a through-silicon via evaluated by rotating disc electrode techniques

Tsai¹,

Huang²

2010

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…[12][13][14] The filling of blind holes with copper can be achieved by either dc or pulsereverse current wave forms. An oxygen purge performed during via filling is beneficial for the filling of blind holes with high aspect ratios ͑Ͼ10͒ using a pulse-reverse wave form, 15 and no leveling agents are needed.…”

mentioning

confidence: 99%

Monitoring the Superfilling of Blind Holes with Electrodeposited Copper

Lühn

Radisic

Hoof

et al. 2010

J. Electrochem. Soc.

View full text Add to dashboard Cite

Blind holes 5 m in diameter and 25 m deep were filled with copper electrodeposited from a copper sulfate electrolyte containing chloride ions, a suppressor, and an accelerator. A thin tantalum layer was deposited on top of a copper seed layer to locally inhibit the subsequent electrodeposition of copper. A clear difference appeared in the evolution of the cathode potential recorded during the galvanostatic deposition of copper on either copper metallized flat substrates or substrates containing copper metallized recessed blind holes and selectively coated with Ta at the outside. The different steps during the filling of blind holes by electrolytic copper were monitored and analyzed based on the evolution of the cathode potential during electrodeposition. An electrochemical depolarization of the electrode surface induced by an accelerating species occurred first. The subsequent evolution of the potential was dominated by a change in the electrode surface that occurs during the superfilling of blind holes with copper. Finally, the time to achieve a complete filling of blind holes with electrolytic copper was determined. A deeper insight on the superfilling mechanism with electrodeposited copper was obtained.

show abstract