1992
DOI: 10.1143/jjap.31.2925
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Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure

Abstract: The decomposition process of tetraethylorthosilicate (TEOS) and ozone at atmospheric pressure was measured in a closed vessel by in-situ Fourier-transform infrared absorption (FT-IR) analysis, and the changes of the deposition rate and the overall sticking probability β of the film precursor were obtained along the flow direction in a flow-type reactor. It has been found that the film precursors are formed by TEOS decomposition with O-atoms and/or ozone in the gas phase, and that CH3CHO may be the first produc… Show more

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Cited by 52 publications
(51 citation statements)
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“…[1±8] The first in-situ IR spectroscopy applications in this field concerned the identification of some silicon species not otherwise detectable, [9±11] the decomposition processes (in the gas phase) of trimethyl indium and gallium, [12] and alkyl cycloctadiene platinum complexes. [13] Subsequently, in-situ FTIR spectroscopy was introduced to study the chemical reactions of tungsten hexafluoride during tungsten deposition, [14] of tetraethylorthosilicate (TEOS) for silica deposition, [15,16] of copper bisdipivaloylmethanate for copper growth at low pressure, [17] and of trimethylgallium and ammonia for GaN deposition. [18] Similarly, many studies were aimed at characterizing precursors.…”
Section: Introductionmentioning
confidence: 99%
“…[1±8] The first in-situ IR spectroscopy applications in this field concerned the identification of some silicon species not otherwise detectable, [9±11] the decomposition processes (in the gas phase) of trimethyl indium and gallium, [12] and alkyl cycloctadiene platinum complexes. [13] Subsequently, in-situ FTIR spectroscopy was introduced to study the chemical reactions of tungsten hexafluoride during tungsten deposition, [14] of tetraethylorthosilicate (TEOS) for silica deposition, [15,16] of copper bisdipivaloylmethanate for copper growth at low pressure, [17] and of trimethylgallium and ammonia for GaN deposition. [18] Similarly, many studies were aimed at characterizing precursors.…”
Section: Introductionmentioning
confidence: 99%
“…According to Kawahara et al, a reaction rate coefficient between TEOS and atomic oxygen is 4.2 × 10 − 14 cm 3 s − 1 at a gas temperature of 333 K [14]. Also, an electron-impact dissociation rate coefficient of TEOS is 1.82 × 10 − 7 cm 3 s − 1 [15].…”
Section: Discussionmentioning
confidence: 99%
“…(23) The production rate of precursors (SiO 2 (g)) depends on the kinetics of the gas-phase reactions. The kinetics of plasma-enhanced reactions in the gas-phase have been studied for simple or commonly used chemicals, such as silane (SiH 4 ) and tetraethylorthosilicate (TEOS), (24)(25)(26)(27)(28)(29)(30) for the deposition of silicon dioxide. A few experimental studies exist for the deposition of silicon dioxide using other organic silicon compounds, including hexamethyldisiloxane (HMDSO, Si 2 O(CH 3 ) 6 ) (25,29,(31)(32)(33) and OMCTS, (26,28,30,34,35) and oxygen or ozone.…”
Section: Gas-phase Chemical Mechanismsmentioning
confidence: 99%