“…(23) The production rate of precursors (SiO 2 (g)) depends on the kinetics of the gas-phase reactions. The kinetics of plasma-enhanced reactions in the gas-phase have been studied for simple or commonly used chemicals, such as silane (SiH 4 ) and tetraethylorthosilicate (TEOS), (24)(25)(26)(27)(28)(29)(30) for the deposition of silicon dioxide. A few experimental studies exist for the deposition of silicon dioxide using other organic silicon compounds, including hexamethyldisiloxane (HMDSO, Si 2 O(CH 3 ) 6 ) (25,29,(31)(32)(33) and OMCTS, (26,28,30,34,35) and oxygen or ozone.…”