Abstract:To satisfy the requirement for mask materials in high-temperature plasma etching, a novolac-based polymer mask was evaluated during high-temperature Cl2 plasma etching. Although the etch rate of 8 nm/min was rather high at a low temperature of 230 °C, it decreased with the increase in temperature. The aromatic ring structures were significantly modified by vacuum ultraviolet (VUV) and Cl radicals during the processes above 300 °C and transformed to a highly cross-linked amorphous carbon (a-C) layer at the surf… Show more
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