Reaction mechanisms for the photon-enhanced etching of semiconductors: An investigation of the UV-stimulated interaction of chlorine with Si(100)

Jackman, Richard B.; Ebert, H.D.; Foord, J.S.

doi:10.1016/0039-6028(86)90171-8

Cited by 101 publications

(20 citation statements)

References 14 publications

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“…In recent years, halogen-containing hydrocarbons have attracted increasing attention due to their potential applications in photochemical etching for device fabrication [1][2][3][4][5][6] or as precursors in low-temperature chemical vapor deposition ͑CVD͒ of diamond coatings on various nondiamond substrates. 7 A fundamental understanding on the binding of halogen-containing molecules with well-defined surfaces is of great importance in developing these industrial processes.…”

Section: Introductionmentioning

confidence: 99%

Stereo-selective binding of chlorobenzene on Si(111)-7×7

Cao

Deng

2000

The Journal of Chemical Physics

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The adsorption and binding of chlorobenzene (C6H5Cl) on clean and D-modified Si(111)-7×7 surfaces have been investigated using high resolution electron energy loss spectroscopy (HREELS) and thermal desorption spectroscopy (TDS). On a clean surface, both chemisorbed and physisorbed C6H5Cl are observed at an adsorption temperature of 110 K. The HREEL spectra show direct evidence for the presence of both sp2 and sp3 carbon atoms in chemisorbed C6H5Cl molecules on Si(111)-7×7. Upon D-modification, the chemisorption of C6H5Cl decreases rapidly with increasing D-coverage (θD). At θD=1/3 ML, only physisorbed chlorobenzene is detected, which strongly suggests the involvement of rest-atoms in the chemisorption of C6H5Cl. Combined with the scanning tunneling microscopy (STM) results by Chen et al. [Surf. Sci. 340, 224 (1995)] showing the participation of adatoms in the binding, we propose that the 2,5-carbon atoms in C6H5Cl are stereo-selectively di-σ bonded to a pair of adjacent adatom and rest-atom on the Si(111)-7×7 surface, yielding a 2,5-chlorocyclohexadienelike surface adduct.

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Section: Introductionmentioning

confidence: 99%

Stereo-selective binding of chlorobenzene on Si(111)-7×7

Cao

Deng

2000

The Journal of Chemical Physics

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“…The chemisorption of chlorine on Si(100) surface has been studied using a wide variety of surface science techniques [6][7][8][9][10][11][12]. However, fundamental issues concerning the Si-CI bond, such as the C1 bonding configuration and C1 binding sites, are still not well understood.…”

Section: Introductionmentioning

confidence: 99%

“…Since the scanning tunneling microscopy (STM) data show a mixture of symmetric and asymmetric Si-Si dimers on the clean Si(100)-(2x1) surface [131, an adsorption modcl was invoked where 4 chlorine adsorption would convert the asymmetric dimer structure to the symmetric dimer structure [14]. Polarization-dependent angle-resolved photoemission studies [101 for chlorine adsorption (at 473K substrate temperature to prevent the weakly bound chlorine phase formation [11]) on a single domain Si(100)-(2x 1) surface indicate the presence of mirror-plane symmetry. This is consistent with an adsorption model where two Cl atoms adsorb on each of the inclined dangling bonds of the symmetric Si 2 dimer.…”

Section: Introductionmentioning

confidence: 99%

Chlorine bonding sites and bonding configurations on Si(100)–(2×1)

Gao

Cheng

Chen

et al. 1993

The Journal of Chemical Physics

114

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A combination of experimental methods has been employed for the study of Cl2 adsorption and reaction on Si(100)–(2×1). At 100 K, Cl2 adsorption occurs rapidly to a coverage of ∼0.7 Cl/Si. This is followed by slower adsorption kinetics with further Cl2 exposure. Two Cl adsorption states are observed experimentally. One of the adsorption states is terminally bonded Cl on the inclined dangling bond of the symmetric Si2 dimer sites, with a vibrational frequency, ν(SiCl) of 550∼600 cm−1. These bonded Cl atoms give four off-normal Cl+ ESDIAD emission beams from the orthogonal domains of silicon dimer sites. The Si–Cl bond angle for this adsorption configuration is estimated to be inclined 25°±4° off-normal. The second Cl adsorption state, a minority species, is bridge bonded Cl with ν(Si2Cl) of ∼295 cm−1 which produces Cl+ ion emission along the surface normal direction. Both adsorption states are present at low temperatures. Irreversible conversion from bridge bonded Cl to terminally bonded Cl begins to occur near 300 K; the conversion is complete near ∼673 K. LEED studies indicate that the (2×1) reconstruction for the substrate is preserved for all Cl coverages. The most probable Cl+ kinetic energy in electron stimulated desorption, ESD, is 1.1−+0.30.6 eV. A significant adsorbate-adsorbate quenching effect reducing the Cl+ ion yield in ESD occurs above a Cl(a) coverage of ∼0.5 ML (monolayer) due to interadsorbate interactions. The maximum Cl+ yield is about 4×10−7 Cl+/e at an electron energy of 120 eV. Temperature programmed desorption results show that SiCl2 is the major etching product which desorbs at about 840 K.

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“…[3] In their work, two desorption peaks for chlorine on silicon were found: one at 175C, termed the a peak, and another peak at 625CC termed the 6 peak. Jackman et.al.…”

Section: Hydrogen-chlorine Exchangementioning

confidence: 99%

Hydrogen--Halogen Exchange Reactions on Silicon (100)

1990

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Using thermal mass desorption and LEED we have studied interactions of H, C12, and F2 with a silicon (100) surface, and exchange reactions of the gases with adsorbates on the silicon (100) surface. Thermal desorption spectra were measured for surfaces dosed with H, C12, and F2 singly and then for surfaces dosed first with a halogen and then atomic hydrogen. Finally, the reverse sequence was studied, with atomic hydrogen dosing and then the halogen exposure. Results indicate that the molecular halogens C12 and F2 are not effective at removing H from a Si (100) surface. However, for the reverse reaction, atomic hydrogen appears quite effective at removing the halogens.

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Reaction mechanisms for the photon-enhanced etching of semiconductors: An investigation of the UV-stimulated interaction of chlorine with Si(100)

Cited by 101 publications

References 14 publications

Stereo-selective binding of chlorobenzene on Si(111)-7×7

Stereo-selective binding of chlorobenzene on Si(111)-7×7

Chlorine bonding sites and bonding configurations on Si(100)–(2×1)

Hydrogen--Halogen Exchange Reactions on Silicon (100)

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