2004
DOI: 10.1016/j.jeurceramsoc.2003.10.022
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Reaction sintering of fluorine-doped MgSiN2

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Cited by 9 publications
(3 citation statements)
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“…Enthalpies of reactions for x values 0.55 and 0.667 in reaction(5). The ternary LaSi/Si/Si 3 N 4 system yields more exothermic reaction.…”
mentioning
confidence: 94%
“…Enthalpies of reactions for x values 0.55 and 0.667 in reaction(5). The ternary LaSi/Si/Si 3 N 4 system yields more exothermic reaction.…”
mentioning
confidence: 94%
“…In recent years, magnesium silicon nitride (MgSiN 2 ) has been attracted great interest due to the crystal structure is similar to aluminium nitride (AlN). Compared with AlN, MgSiN 2 is a simple covalent insulator, and shows more excellent mechanical properties than AlN ceramics [1] [2] [3]. MgSiN 2 has many attractive properties such as high thermal conductivity, low dielectric constant, high hardness, high thermal stability, good oxidation resistance (up to 920˚C) and high electrical resistance at room temperature [4] [5].…”
Section: Introductionmentioning
confidence: 99%
“…Although combustion synthesis or self‐propagating high‐temperature synthesis (SHS) was applied to synthesize some (oxy) nitride phosphors, 8–10 there have been no previous studies of the dependence of nitridation kinetics on the composition of the single‐phase intermetallic compound, particle size, and reaction conditions. The nitridation of alloys or intermetallics 11–19 is considered beneficial for the formation of high‐purity nitrides for electronics applications, including phosphor research. This method has been applied to nitridation of molten Al alloys by nitrogen to produce AlN ceramic matrix composites 19 .…”
Section: Introductionmentioning
confidence: 99%