The nitridation process of Eu‐doped AEAlSi (AE=Ca and/or Sr) was investigated by thermogravimetry–differential thermal analysis to improve the method for synthesis of AEAlSiN3:Eu2+ nitride phosphors. The nitridation reactivity was dependent on alkaline earth elements. For SrxEuyCa1−x−yAlSi with a high Sr content, nitridation proceeded efficiently at 1100°–1150°C, close to the melting point of the intermetallic compounds. As nitridation of Si or Al intermetallics usually proceeds via the diffusion‐controlled surface reaction, sudden rupture of the diffusion barrier, the surface nitride layer, at the melting point could cause a marked change in the reaction rate and dependence on nitrogen partial pressure. The order of reactivity at temperatures close to the melting point agreed with the order of vapor pressure of alkaline earth elements at the melting point. A highly efficient process for large‐scale production of SrxCa1−xAlSiN3:Eu2+ phosphor was developed taking advantage of the characteristic nitridation reaction at the melting point.