Reactions Between Liquid Silicon and Different Refractory Materials

Deike, Rüdiger; Schwerdtfeger, Klaus

doi:10.1149/1.2044109

Cited by 23 publications

(14 citation statements)

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“…Dezellus et al [8] have reported a value of h = 35 deg for R a = 0.005 lm. (b) As shown in the results and reported in the literature, [3,6,8,10,12] liquid silicon infiltrates the substrates thereby decreasing the volume of liquid silicon remaining above the surface. Therefore, in this case, receding rather than advancing contact angles are measured.…”

Section: Discussionsupporting

confidence: 64%

“…For short reaction times, up to 20 minutes, the silicon carbide crystals grow nonuniformly in the form of islands. The silicon carbide formed in contact with graphite is present in the following different morphologies [3] : reach far into the silicon, or may even seem to be free, being surrounded completely by the silicon phase. Often, spaces are found between neighboring crystals filled with silicon.…”

Section: Discussionmentioning

confidence: 99%

“…Various types of carbon materials such as glassy or vitreous carbon, pyrolytic graphite, and natural graphites are employed as substrates with known open porosity and pore size. [3,6,8,10] Li and Hausner [12] used commercial graphite materials with various surface roughnesses as substrates, and the contact angles were measured at 1703 K (1430°C). Melting (t = 0) starts at the contact points between the silicon and the substrate once the melting point 1687 K (1414°C) of silicon is attained (Figure 2(b)).…”

Section: Wettingmentioning

confidence: 99%

“…However, in the absence of such materials, one should try to minimize wetting and infiltration of molten silicon into the refractories. [3] Therefore, wetting and infiltration of these materials by molten silicon is important.…”

Section: Introductionmentioning

confidence: 99%

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Wetting Properties of Molten Silicon with Graphite Materials

Ciftja

Engh

Tangstad

2010

Metall Mater Trans A

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The wetting behavior of refractory materials by molten silicon is important in the refining and casting of silicon with respect to production of low-cost solar cells. Here we studied the wetting properties of several graphite materials by molten silicon. These materials are used in the photovoltaic industry. The sessile drop method is employed to measure the contact angles. Initially, molten silicon does not wet graphite materials. The initial contact angles measured are approximately 120 deg. Molten silicon will react with C to form b-SiC and to infiltrate the refractory. Because losses of Si should be minimized, infiltration of Si into the refractory also is a problem. Surface roughness increases the contact area between Si and refractory and thus the loss of Si. Equilibrium wetting angles of 0 deg to 31 deg are measured. With increasing surface roughness, the equilibrium wetting angles decrease. The results show that the infiltration depth of molten silicon increases with the average pore size of graphite materials.

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Section: Discussionsupporting

confidence: 64%

Section: Discussionmentioning

confidence: 99%

Section: Wettingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Wetting Properties of Molten Silicon with Graphite Materials

Ciftja

Engh

Tangstad

2010

Metall Mater Trans A

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“…From reactive wetting experiments, there are indications that this dissolution of graphite is a very rapid process, as is the diffusion of carbon in liquid silicon [44,45]. Normally, this behaviour should result in a carbon saturated silicon melt, but scanning electron microscopy analyses of the silicon-graphite interface show the existence of a SiC layer at the interface [46]. The growth of the SiC layer takes place in two different growth regimes: the initial one with the linear kinetics of an interface-reaction limited process, followed by a slower process with approximately parabolic kinetics, which can be explained by a growth process that is limited by carbon diffusion through the SiC layer.…”

Section: Refractory Materialsmentioning

confidence: 99%

New Crystalline Si Ribbon Materials for Photovoltaics

Hahn¹,

Schönecker²,

Gutjahr³

2009

Advances in Materials Research

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Abstract. The objective of this chapter is to review, for photovoltaic application, the current status of crystalline silicon ribbon technologies as an alternative to wafers originating from ingots. Increased wafer demand, the current silicon feedstock shortage and the need of a substantial module cost reduction are the main issues that must be faced in the booming photovoltaic market. Ribbon technologies make excellent use of the silicon, as wafers are crystallised directly from the melt in the desired thickness and no kerf losses occur. Therefore, they offer a high potential to significantly reduce photovoltaic electricity costs when compared to wafers cut from ingots. Nevertheless, the defect structure present in the ribbon silicon wafers can limit material quality and cell efficiency. Ribbon GrowthTo provide an answer to the rapidly growing demand for cheap and easily available solar electricity, the photovoltaic industry is looking for more cost efficient and faster manufacturing processes for all steps of the value chain from silicon feedstock to crystallisation and wafering, cell processing and finally module fabrication. Silicon ribbons, as an alternative to silicon wafers that have been crystallised in the form of ingots and then cut into wafers, have, due to their higher silicon usage and potential for high production speed, significant advantages with respect to cost and throughput. However, a more complex technology and different wafer properties that often result in slightly lower conversion efficiencies are obstacles to be overcome.In principle, all ribbon processes have the characteristics that almost all silicon supplied into the process is converted into wafers. There is also no wafer cutting from a block, although in dependence upon the production method separation of larger sheets into wafers may be needed. Depending upon the type of crystallisation, silicon ribbon growth processes are either relatively slow processes, which can be run on rather low-cost equipment or high-speed processes operated with rather complex machinery.

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Influence of Oxygen Content on the Wettability of Silicon on Graphite

Benouahmane

Zhang

2017

The Minerals, Metals &Amp; Materials Series

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Reactions Between Liquid Silicon and Different Refractory Materials

Cited by 23 publications

References 0 publications

Wetting Properties of Molten Silicon with Graphite Materials

Wetting Properties of Molten Silicon with Graphite Materials

New Crystalline Si Ribbon Materials for Photovoltaics

Influence of Oxygen Content on the Wettability of Silicon on Graphite

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