Reactions Between Silicon and Graphite Substrates at High Temperature: In Situ Observations

White, Jesse F.; Ma, Luyao; Forwald, Karl R.; Sichen, Du

doi:10.1007/s11663-013-9947-0

Cited by 26 publications

(6 citation statements)

References 16 publications

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“…The experimental technique was very similar to a previous study [11] that investigated the wetting of graphite by liquid silicon; the system is also described in a previous publication. [12] A horizontal Entech electrical tube furnace with Kanthal Super heating elements and an alumina reaction tube (70 mm inner diameter) was used in this study.…”

Section: Methodsmentioning

confidence: 99%

Reactions Between Liquid CaO-SiO2 Slags and Graphite Substrates

White

Lee

Hessling

et al. 2016

Metall Mater Trans B

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In this study, the spreading and infiltration behavior of liquid slag in contact with different grades of graphite was investigated. The wetting and infiltration of slag into graphite were found to be highly material dependent. The reduction of silica by carbon is a characteristic of the system, and it generates gaseous products as evidenced by the observation of bubble formation. The higher the temperature and silica activity of the slag is, the greater the slag infiltration and the faster the rate of spreading. Silicon infiltrated into the graphite substrates much deeper than the oxide phases, indicating gas-phase transport of SiO(g) into the graphite pores. Fundamentally, in this system where the liquid and substrate are reacting, the driving force for spreading is the movement of the system toward a lower total Gibbs energy. Reduction of silica in the slag near the interface may eventually lead to the formation of a solid, CaO-rich layer, slowing down or stopping the reduction reaction.

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Section: Methodsmentioning

confidence: 99%

Reactions Between Liquid CaO-SiO2 Slags and Graphite Substrates

White

Lee

Hessling

et al. 2016

Metall Mater Trans B

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“…According to the report of J.F. White [ 37 ], the CTE of carbon is 2.1 × 10 −6 K −1 at room temperature, so this is another reason to explain the lowest value of CTE for S3. The existence of residual carbon as the impurity and pores led to an inconsistent trend of curve changes with S0 and S1.…”

Section: Resultsmentioning

confidence: 99%

Microstructure Evolution and Performance Improvement of Silicon Carbide Ceramics via Impregnation Method

Guo

Cui

et al. 2022

Materials

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The high topological silicon carbide (SiC) ceramics can be prepared by stereolithography (SLA) combined with liquid silicon infiltration (LSI) techniques. This paper aims to enhance the performance of SiC ceramics prepared by SLA and LSI techniques via the cyclic impregnation/carbonization of the precursor of carbon source solution before LSI. The effects of impregnation/carbonization cycles on the microstructure and properties of C/SiC preform and sintered body were analyzed in detail. The results show that, with the increase of impregnation/carbonization cycles, the porosity in the C/SiC preform decreases obviously and the content of secondary SiC in the sintered body increases effectively. Especially, when the impregnation/carbonization cycle was performed twice, the sintered body had the optimal mechanical properties. The value of flexural strength, bulk density and elastic modulus were 258.63 ± 8.33 MPa, 2.95 ± 0.02 g/cm3 and 425.16 ± 14.15 GPa, respectively. In addition, the thermal dimensional stability of sintered body was also improved by this method. This method proves that SiC ceramics prepared by SLA combined with LSI have the potential of applications in space optical mirrors.

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“…The carbon in the single microchannel experiment is glassy, yet the carbon and in the preform is graphitic. White et al [26] and Voytovych et al [27] have shown that the reaction rate of Si with C and the nature of the produced SiC are material-dependent. Secondly the tortuosity of the pore structure and the presence of pores with diameters lower than 10 µm hinder longer infiltration lengths obtained for non-isothermal infiltration over the peritectic temperature of the Si 2 Zr formation.…”

Section: Tablementioning

confidence: 99%