1997
DOI: 10.1063/1.365797
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Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal

Abstract: The reactivation kinetics of passivated boron acceptors in hydrogenated silicon during zero bias annealing in the temperature range of 65–130 °C are reported. For large annealing times and high annealing temperatures, the reactivation process follows second-order kinetics and is rate limited by a thermally activated H̃2 complex formation process. For short annealing times and low annealing temperatures, the reactivation rate is found to be larger than that due to H̃2 complex formation alone. We conclude that t… Show more

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Cited by 2 publications
(1 citation statement)
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“…The large scatter in data for diffusion of hydrogen through silicon 148,[196][197][198][199][200][201][202][203][204][205][206][207][208][209][210][211][212][213][214] . We have only plotted data for hydrogen diffusion (no isotopes) and have indicated the type of silicon where known.…”
Section: Noble Gasesmentioning
confidence: 99%
“…The large scatter in data for diffusion of hydrogen through silicon 148,[196][197][198][199][200][201][202][203][204][205][206][207][208][209][210][211][212][213][214] . We have only plotted data for hydrogen diffusion (no isotopes) and have indicated the type of silicon where known.…”
Section: Noble Gasesmentioning
confidence: 99%