Reactive deposition of TiN films by magnetron with magnetized hollow cathode enhanced target

Reactive process and hysteresis effect in magnetron with magnetized hollow cathode enhanced target

“…This is in agreement with our previous measurements where the maximum production of Ti and Ti + species and maximum deposition rates were achieved. [4] We can see the hysteresis again, but the whole hysteresis area is shifted to the left to lower nitrogen contents as compared to the magnetron. The same effect can be seen in Figure 6 for V s-b versus nitrogen content dependence.…”

“…This is in agreement with our previous measurements where the maximum production of Ti and Ti + species and maximum deposition rates were achieved. [ 4 ]…”

“…Sufficient arrival of the “activated reactive” gas was also confirmed by the results in ref. [4], where both high deposition rates of TiN and even stoichiometric films were achieved at low nitrogen percentages. The authors believe that a higher degree of activation of nitrogen, either increase of N 2 excitation or increase of N 2 molecule ionization occurs.…”

“…Details about the HoCET concept have been already published elsewhere. [3,4] A schematic sketch is shown in Figure 1. In experiments, a planar magnetron ONYX-4MAGII™ produced by Angstrom Sciences Inc. with a circular Ti target (diameter of 4 inches) was used.…”

“…[ 3 ] The device has recently been tested also for the reactive deposition of TiN and compared to the magnetron deposition. [ 4 ] The HoCET magnetron provided a 140% increase in the TiN reactive deposition rate over the non‐reactive deposition of Ti, at 14 mTorr (1.87 Pa). Even stoichiometric films were obtained at deposition rates higher than the deposition rate of Ti.…”