Reactive fluorinated surfactant for step and flash imprint lithography

Ogawa, Tomoko; Hellebusch, Daniel J.; Lin, Min‐Der; Jacobsson, B. Michael; Bell, William K.; Willson, C. Grant

doi:10.1117/12.871627

Cited by 10 publications

(9 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The template was pretreated with a fluorinated surface treatment (tridecafluoro-1,1,2,2-tetrahydro octyldimethylchlorosilane from Gelest Inc., Morrisville, Pennsylvania) to improve the template release. 13,14 In the third step, a CHF 3 etch was carried out on a reactive ion etcher, Oxford Plasmalab 80 plus (Oxford Instruments, Abingdon, United Kingdom) to remove the excess epoxy-Si-12 layer. The etch ratio of epoxy-Si-12 was measured to enable a timed process that led to the correct etch depth.…”

Section: S-fil/r Demonstration Using Epoxy-si-12mentioning

confidence: 99%

Planarizing material for reverse-tone step and flash imprint lithography

Ogawa

Jacobsson

Deschner

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

Self Cite

View full text Add to dashboard Cite

Abstract. Reverse-tone step and flash imprint lithography (S-FIL/R) requires materials that can be spin-coated onto patterned substrates with significant topography and that are highly planarizing. Ideally, these planarizing materials must contain silicon for etch selectivity, be UV or thermally curable, and have low viscosity and low volatility. One such unique material, in particular, a branched and functionalized siloxane (Si-12), is able to adequately satisfy the above requirements. This paper describes a study of the properties of epoxy functionalized Si-12 (epoxy-Si-12) as a planarizing layer. An efficient synthetic route to epoxy-Si-12 was successfully developed, which is suitable and scalable for an industrial process. Epoxy-Si-12 has a high silicon content (30.0%), low viscosity (29 cP at 25°C), and low vapor pressure (0.65 Torr at 25°C). A planarizing study was carried out using epoxy-Si-12 on trench patterned test substrates. The material showed excellent planarizing properties and met the calculated critical degree of planarization (critical DOP), which is a requirement for a successful etch process. An S-FIL/R process using epoxy-Si-12 was demonstrated using an Imprio® 100 (Molecular Imprints Inc., Austin, Texas) imprint tool. The results indicate that epoxy-Si-12 works very well as a planarizing layer for S-FIL/R.

show abstract

Section: S-fil/r Demonstration Using Epoxy-si-12mentioning

confidence: 99%

Planarizing material for reverse-tone step and flash imprint lithography

Ogawa

Jacobsson

Deschner

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

Self Cite

View full text Add to dashboard Cite

show abstract

“…27 As a different approach to preventing release agent decomposition, an inorganic thin film release layer, such as DLC, was proposed. 28,29 Resist release property was also improved by adding to the resist an antisticking agent such as fluoroalkyl silane (which is the same as the mold release agent), 30 fluorine surfactant, 8,31,32 and fluorine monomer. 32,33 It was also found that reducing the elastic modulus is effective in reducing release force.…”

Section: Release Propertymentioning

confidence: 97%

Design considerations for ultraviolet-nanoimprint lithography resists

Usuki

Wakamatsu

Oomatsu

et al. 2012

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Design considerations for ultraviolet-nanoimprint lithography resists were investigated focusing on the major issues of ink-jetting performance, pattern formability, release property, and dry etching resistance. Regarding ink-jetting performance, small droplet ink-jetting of 0.7 pl was successfully demonstrated by adjusting the resist fluid property to the ink-jet coater and controlling the resist volatilization. Regarding pattern formability, a resist pattern was imprinted from a mold pattern of 28 nm in width and 60 nm in depth without pattern dimension change. It was thought that modulus control of the resist was more important than resist shrinkage in achieving excellent pattern formability. As for release property, resist with fluorine monomer and with nonreactive fluorine antisticking agent were compared. The results indicated that resist design has the capability to both reduce separation force and maintain a clear mold surface. The mold release agent decomposed with an increasing number of imprint shots, but the low release-force resist with nonreactive antisticking agent was able to control degradation of the mold release agent and thus improve release property endurance. Regarding etching resistance, it was found that increasing the ring parameter of resist is essential for high etching resistance, and resulted in improved etched pattern features of the substrate.

show abstract

“…21 An adhesion layer (mr-APS1, micro resist technology GmbH, Germany or TPU-NIL-UL11 illustrated in Fig. A quartz template was treated in the standard way with a perfluroalkylchlorosilane to create a release layer.…”

Section: E Ma-si-12/8-ring Formulationmentioning

confidence: 99%

Ultraviolet curable branched siloxanes as low-k dielectrics for imprint lithography

Ogawa

Takei

Willson

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

Self Cite

View full text Add to dashboard Cite

The effect of water uptake on the mechanical properties of low-k organosilicate glass Effect of UV wavelength on the hardening process of porogen-containing and porogen-free ultralow-k plasmaenhanced chemical vapor deposition dielectricsa)A methacrylate-based, UV curable branched siloxane (MA-Si-12) was designed for use as a low-k dielectric that can be directly patterned by step and flash imprint lithography. MA-Si-12 has the properties of low viscosity (20 cP) and low vapor pressure (1.3 Torr), which make the material suitable for imprint processes based on an inkjet dispensing system. However, the mechanical strength of UV cured MA-Si-12 is too low (0.4 GPa Young's modulus by nanoindentation) for use with chemical mechanical polishing. Therefore, a methacrylate-based, UV curable cyclic siloxane (8-ring) was synthesized to be blended with the siloxane and improve the modulus. A formulation consisting of a mixture of MA-Si-12 and 8-ring (50 wt. % respectively) provides patterned structures with a modulus of 2.0 GPa. This formulation still has a viscosity (19 cP) and vapor pressure (1.3 Torr) low enough for inkjet dispensing. The UV cured resin has a dielectric constant of 2.8 at 1 MHz, low water absorption (0.7 wt. % after 24 h), and low UV cure shrinkage (5.6%). It provides high resolution, high fidelity imprint patterns. Mixing or blending of branched and cyclic siloxanes is a valuable approach to the design of imprint resist formulations with low dielectric constants.

show abstract

Reactive fluorinated surfactant for step and flash imprint lithography

Cited by 10 publications

References 0 publications

Planarizing material for reverse-tone step and flash imprint lithography

Planarizing material for reverse-tone step and flash imprint lithography

Design considerations for ultraviolet-nanoimprint lithography resists

Ultraviolet curable branched siloxanes as low-k dielectrics for imprint lithography

Contact Info

Product

Resources

About